Abstract
The relationships between the coercive field (E C), remanent polarization (P 0), and thickness (t FE) of a ferroelectric material are derived analytically to determine the minimum subthreshold swing (S min) of a negative-capacitance field-effect transistor (NC-FET). The interdependence of the ferroelectric material properties is defined based on the capacitance matching condition in the subthreshold region of the NC-FET. An optimized combination of the parameters of the ferroelectric material in a gate stack is proposed to achieve transfer characteristics without hysteresis as well as lower subthreshold swing. The results are validated against numerical and experimental results available in literature. Furthermore, the minimum possible subthreshold swing (S min) is obtained for different ferroelectric materials used in the gate stack of an NC-FET in the context of a manufacturable semiconductor technology. The channel doping, ferroelectric thickness, and minimum subthreshold are calculated for five different ferroelectric materials.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
Change history
31 December 2020
This article has been retracted. Please see the Retraction Notice for more detail: https://doi.org/10.1007/s10825-020-01640-0.
References
Salahuddin, S., Datta, S.: Use of negative capacitance to provide voltage amplification for low power nanoscale devices. Nano Lett. 8(2), 405–410 (2008)
Khan, A.I., Bhowmik, D., Yu, P., et al.: Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures. Appl. Phys. Lett. 99(11), 113501 (2011)
Seabaugh, A.C., Zhang, Q.: Low-voltage tunnel transistors for beyond CMOS logic. Proc. IEEE 98(12), 2095–2110 (2010)
Gopalakrishnan, K., Woo, R., Jungemann, C., et al.: Impact ionization MOS (I-MOS) —Part I: device and circuit simulation. IEEE Trans. Electron Devices 52(1), 69–76 (2005)
Devonshire, A.F.: Theory of ferroelectrics. Adv. Phys. 3(10), 85–130 (1954)
Rabe, K. M., Ahn, C. H., Triscone, J. M.: Physics of ferroelectrics: a modern perspective. Berlin (2007)
Ginzburg, V.L.: Phase transitions in ferroelectrics: some historical remarks. UFN 171(10), 1091–1097 (2001)
Rusu, A., Salvatore, G. A., Jimenez, D., Ionescu, A. M.: Metal-ferroelectric-metal-oxide semiconductor field effect transistor with Sub-60 mV/decade subthreshold swing and voltage amplification. IEEE Int. Electron Devices Meet. 16.3.1–16.3.4 (2010)
Taur, Y., Ning, T., Fundamentals of Modern VLSI Device. Cambridge (1998)
Rasool, R., Rather, G.M., Najeeb-ud-Din: Analytic model for the electrical properties of negative capacitance metal-ferroelectric-insulator-silicon (MFIS) capacitor. Integr. Ferroelectr. 185, 93–101 (2017)
Jain, A., Alam, M.A.: Prospects of hysteresis free abrupt switching (0 mV/decade) in Landau switches. IEEE Trans. Electron Devices 60(12), 4269–4276 (2013)
Khan, A. I., Yeung, C.W., Hu C., Salahuddin, S.: Ferroelectric negative capacitance MOSFET: capacitance tuning & antiferroelectric operation. IEEE Int. Electron Devices Meet. 11.3.1–11.3.4 (2011)
Seeger, J.I., Crary, S.B.: Analysis and simulation of MOS capacitor feedback for stabilizing electrostatically actuated mechanical devices. Trans. Built. Environ. 31(13), 199–208 (1997)
Krowne, C.M., Kirchoefer, S.W., Chang, W., et al.: Examination of possibility of negative capacitance using ferroelectric materials in solid state electronic devices. Nanoletters 11(3), 988–992 (2011)
Jain, A., Alam, M.A.: Stability constraints define the minimum subthreshold swing of a negative capacitance field-effect transistor. IEEE Trans. Electron Devices 61(7), 2235–2242 (2014)
Jiménez, D., Miranda, E., Godoy, A.: Analytic model for the surface potential and drain current in negative capacitance field-effect transistors. IEEE Trans. Electron Devices 57(10), 2405–2409 (2010)
Pierret R. F. Semiconductor Device Fundamentals. Pearson, 1995
You, W.X., Tsai, C.P., Su, P.: Short channel effects in 2D negative-capacitance field effect transistors. IEEE Trans. Electron Devices 65(4), 1604–1610 (2018)
Lee, H., Yoon, Y., Shin, C.: Current voltage model for negative capacitance field effect transistors. IEEE Electron Device Lett. 38(5), 669–672 (2017)
Lin, C.I., Khan, A.I., Salahuddin, S., Hu, C.: Effects of the variation of ferroelectric properties on negative capacitance FET characteristics. IEEE Trans. Electron Devices 63(5), 2197–2199 (2016)
Dasgupta, D., Rajashekhar, A., Majumdar, K., et al.: Sub-KT/Q switching in strong inversion in PbZr0.52Ti0.48O3 gated negative capacitance FETs. IEEE J. Explor. Solid State Comput. Devices Circ. 1, 43–48 (2015)
Cano, A., Jimenez, D.: Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors. Appl. Phys. Lett. 97(13), 133509 (2010)
Boscke, T. S., Muller, J.,Bruhaus, D., et al.: Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors. IEEE Int. Electron Devices Meet. 24.5.1–25.5.4 (2011)
Li, Y., Lian, Y., Yao, K., et al.: Evaluation and optimization of short channel ferroelectric MOSFET for low power circuit application with BSIM4 and Landau theory. Solid State Electron. 114, 17–22 (2015)
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
This article has been retracted. Please see the retraction notice for more detail:https://doi.org/10.1007/s10825-020-01640-0
About this article
Cite this article
Rasool, R., Najeeb-ud-Din & Rather, G.M. RETRACTED ARTICLE: An analytical model for the effects of the variation of ferroelectric material parameters on the minimum subthreshold swing of NC-FETs. J Comput Electron 18, 1207–1213 (2019). https://doi.org/10.1007/s10825-019-01395-3
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10825-019-01395-3