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Theoretical study of optical absorption in nonpolar AlGaN/GaN step quantum well structures

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Abstract

The linear and nonlinear intersubband optical absorption coefficients (OACs) of nonpolar AlGaN/GaN step quantum well structures (SQWs) were calculated theoretically for various geometrical structures, \( \delta \) doping schemes, and material compositions. The results revealed that the absorption frequency of such structures is obviously tunable by changing parameters such as the quantum well width, step barrier width, Al composition in the step barrier layer, and doping position. These characteristics can be attributed to non-polarization-related effects. The doping and Al composition were found to have remarkable effects on the position and magnitude of the peaks in the nonlinear optical absorption spectrum, whereas the geometric parameters of the SQWs, such as the well width and step barrier width, changed the magnitude of the peaks only very slightly. On the other hand, the nonlinear OACs of the SQWs were found to be strongly sensitive to the Al composition x and doping density in the step barrier layer. This study suggests that the step barrier layer in SQWs plays an important role in manipulating their intersubband optical absorption.

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References

  1. Iizuka, N., Yoshida, H., Managaki, N., Shimizu, T., Hassanet, S., Cumtornkittikul, C., Sugiyama, M., Nakano, Y.: Integration of GaN/AlN all-optical switch with SiN/AlN waveguide utilizing spot-size conversion. Opt. Express 17, 23247–23253 (2009)

    Article  Google Scholar 

  2. Vardi, A., Sakr, S., Mangeney, J., Kandaswamy, P.K., Monroy, E., Tchernycheva, M., Schacham, S.E., Julien, F.H., Bahir, G.: Femto-second electron transit time characterization in GaN/AlGaN quantum cascade detector at 1.5 micron. Appl. Phys. Lett. 99, 202111–202113 (2011)

    Article  Google Scholar 

  3. Baumann, E., Giorgetta, F.R., Hofstetter, D., Lu, H., Chen, X., Schaff, W.J., Eastman, L.F., Golka, S., Schrenk, W., Strasser, G.: Intersubband photoconductivity at 1.6 μm using a strain-compensated AlN/GaNAlN/GaN superlattice. Appl. Phys. Lett. 87, 191102–191104 (2005)

    Article  Google Scholar 

  4. Vardi, A., Bahir, G., Guillot, F., Bougerol, C., Monroy, E., Schacham, S.E., Tchernycheva, M., Julien, F.H.: Near infrared quantum cascade detector in GaN/AlGaN/AlNGaN/AlGaN/AlN heterostructures. Appl. Phys. Lett. 92, 011112 (2008)

    Article  Google Scholar 

  5. Bellotti, E., Driscoll, K., Moustakas, T.D., Paiella, R.: Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors. J. Appl. Phys. 105, 113103 (2009)

    Article  Google Scholar 

  6. Sun, G., Khurgin, J.B., Tsai, D.P.: Spoof plasmon waveguide enabled ultrathin room temperature THz GaN quantum cascade laser: a feasibility study. Opt. Express 21, 28054–28061 (2013)

    Article  Google Scholar 

  7. Suzuki, N., Iizuka, N.: Feasibility study on ultrafast nonlinear optical properties of 1.55-µm intersubband transition in AlGaN/GaN quantum wells. Jpn. J. Appl. Phys. Part 2 36, L1006–L1008 (1997)

    Article  Google Scholar 

  8. Gmachl, C., Ng, H.M., Cho, A.Y.: Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ ~ 1.75–4.2 μm. Appl. Phys. Lett. 77, 334–336 (2000)

    Article  Google Scholar 

  9. Gmachl, C.H., Ng, M.S., Chu, N.G., Cho, A.Y.: Intersubband absorption at λ ∼ 1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers. Appl. Phys. Lett. 77, 3722–3724 (2000)

    Article  Google Scholar 

  10. Shirazi-HD, M., Turkmeneli, K., Liu, S., Dai, S., Edmunds, C., Shao, J., Gardner, G., Zakharov, D.N., Manfra, M.J., Malis, O.: Dramatic enhancement of near-infrared intersubband absorption in c-plane AlInN/GaN superlattices. Appl. Phys. Lett. 108, 121108-5 (2016)

    Article  Google Scholar 

  11. Kotani, T., Arita, M., Hoshino, K., Arakawa, Y.: Temperature dependence of mid-infrared intersubband absorption in AlGaN/GaN multiple quantum wells. Appl. Phys. Lett. 108, 052102 (2016)

    Article  Google Scholar 

  12. Driscoll, K., Bhattacharyya, A., Moustakas, T.D., Paiella, R., Zhou, L., Smith, D.J.: Intersubband absorption in AlN/GaN/AlGaNAlN/GaN/AlGaN coupled quantum wells. Appl. Phys. Lett. 91, 141104-3 (2007)

    Google Scholar 

  13. Jakštas, V., Grigelionis, I., Janonis, V., Valušis, G., Kašalynas, I., Seniutinas, G., Juodkazis, S., Prystawko, P., Leszczyński, M.: Electrically driven terahertz radiation of 2DEG plasmons in AlGaN/GaN structures at 110 K temperature. Appl. Phys. Lett. 110, 202101-3 (2017)

    Google Scholar 

  14. Bellotti, E., Driscoll, K., Moustakas, T., Paiella, R.: Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures. Appl. Phys. Lett. 92, 101112-3 (2008)

    Article  Google Scholar 

  15. Vukmirović, N., Jovanović, V.D., Indjin, D., Ikonić, Z., Harrison, P., Milanović, V.: Optically pumped terahertz laser based on intersubband transitions in a GaN/AlGaN double quantum well. J. Appl. Phys. 97, 103106-5 (2005)

    Google Scholar 

  16. Kuokstis, E., Chen, C.Q., Gaevski, M.E., Sun, W.H., Yang, J.W., Simin, G., Khan, M.A., Maruska, H.P., Hill, D.W., Chou, M.C., Gallagher, J.J., Chai, B.: Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells. Appl. Phys. Lett. 81, 4130–4132 (2002)

    Article  Google Scholar 

  17. Durmaz, H., Nothern, D., Brummer, G., Moustakas, T.D., Paiella, R.: Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures. Appl. Phys. Lett. 108, 201102-3 (2016)

    Article  Google Scholar 

  18. Fu, H., Chen, H., Huang, X., Lu, Z., Zhao, Y.: Theoretical analysis of modulation doping effects on intersubband transition properties of semipolar AlGaN/GaN quantum well. J. Appl. Phys. 121, 014501 (2017)

    Article  Google Scholar 

  19. Kotani, T., Arita, M., Arakawa, Y.: Observation of mid-infrared intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells. Appl. Phys. Lett. 105, 261108 (2014)

    Article  Google Scholar 

  20. Edmunds, C., Shao, J., Shirazi-HD, M., Manfra, M.J., Malis, O.: Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells. Appl. Phys. Lett. 105, 021109 (2014)

    Article  Google Scholar 

  21. Yuh, P.F., Wang, K.L.: Optical transitions in a step quantum well. J. Appl. Phys. 65, 4377 (1989)

    Article  Google Scholar 

  22. Teng, H.B., Sun, J.P., Haddad, G.I., Stroscio, M., Yu, S., Kim, K.W.: Phonon assisted intersubband transitions in step quantum well structures. J. Appl. Phys. 84, 2155–2164 (1998)

    Article  Google Scholar 

  23. Wu, W., Chang, K., Jiang, D., Li, Y., Zheng, H.Z.: InxGa1−xAs/AlyGa1−yAs/AlzGa1−zAs asymmetric step quantum-well middle wavelength infrared detectors. J. Appl. Phys. 90, 3437–3441 (2001)

    Article  Google Scholar 

  24. Wu, F., Tian, W., Yan, W.Y., Zhang, J., Sun, S., Dai, J., Fang, Y., Wu, Z., Chen, C.: Terahertz intersubband transition in GaN/AlGaN step quantum well. J. Appl. Phys. 113, 154505 (2013)

    Article  Google Scholar 

  25. Wu, F., Tian, W., Zhang, J., Wang, S., Wan, Q., Dai, J., Wu, Z., Xu, J., Li, X., Fang, Y., Chen, C.: Double-resonance enhanced intersubband second-order nonlinear optical susceptibilities in GaN/AlGaN step quantum wells. Opt. Express 22, 14212–14220 (2014)

    Article  Google Scholar 

  26. Liu, D., Cheng, Y., He, J.: Nanogroove control of intersubband absorption in AlGaAs/GaAs step quantum wells. Semicond. Sci. Technol. 31, 035006-5 (2016)

    Google Scholar 

  27. Machhadani, H., Kotsar, Y., Sakr, S., Tchernycheva, M., Colombelli, R., Mangeney, J., Bellet-Amalric, E., Sarigiannidou, E., Monroy, E., Julien, F.H.: Terahertz intersubband absorption in GaN/AlGaN step quantum wells. Appl. Phys. Lett. 97, 191101 (2010)

    Article  Google Scholar 

  28. Ando, T., Taniyama, H., Ohtani, N., Nakayama, M., Hosoda, M.: Self-consistent calculation of subband occupation and electron–hole plasma effects: variational approach to quantum well states with Hartree and exchange-correlation interactions. J. Appl. Phys. 94, 4489 (2003)

    Article  Google Scholar 

  29. Ahn, D., Chuang, L.: Calculation of linear and nonlinear intersubband optical absorptions in a quantum well model with an applied electric field. IEEE J. Quantum Electron. 23, 2196–2204 (1987)

    Article  Google Scholar 

  30. Lim, C., Ajay, A., Lähnemann, J., Bougerol, C., Monroy, E.: Effect of Ge-doping on the short-wave, mid-and far-infrared intersubband transitions in GaN/AlGaN heterostructures. Semicond. Sci. Technol. 32, 125002(1–10) (2017)

    Article  Google Scholar 

  31. Chen, J., Shi, T.: Influence of delta doping on intersubband transition and absorption in AlGaN/GaN step quantum wells for terahertz applications. Physica E 69, 96–100 (2015)

    Article  Google Scholar 

Download references

Acknowledgments

This work is supported by Guangzhou Municipal Science and Technology Project, China (grant no. 201804010444).

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  1. School of Information Engineering, Guangdong University of Technology, Guangzhou, 510006, People’s Republic of China

    Dongfeng Liu & Caifeng He

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Liu, D., He, C. Theoretical study of optical absorption in nonpolar AlGaN/GaN step quantum well structures. J Comput Electron 18, 251–259 (2019). https://doi.org/10.1007/s10825-018-1263-0

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