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Asymmetric junctionless nanowire TFET with built-in \({n}^{+}\) source pocket emphasizing on energy band modification

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Abstract

We present a detailed study on a technique to realize a narrow and highly doped built-in \({n}^{+}\) source pocket in an asymmetric junctionless nanowire tunnel field-effect transistor (AJN-TFET). In the proposed structure, a built-in \({n}^{+}\) source pocket is created between the \({p}^{+}\) source and the channel without the need for any separate implantation or epitaxial growth. This leads to band diagram modification by providing a local minimum in the conduction band which results in tunneling width reduction at the source–channel interface in on-state. This leads to an abrupt transition between on- and off-state, improved subthreshold swing (SS) (38 mV/dec), and significant on-current enhancement (\(\sim 2000\) times) at low operating voltage compared with the conventional TFET. We further study the effect of the length of the built-in \({n}^{+}\) source pocket on the AJN-TFET characteristics. The proposed structure overcomes the difficulty in creating a narrow \({n}^{+}\) pocket and thus renders the AJN-TFET device more amenable for the future scaling trend needed in low-power applications.

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Acknowledgments

The authors would like to acknowledge partial support by Nanoelectronic Center of Excellence, department of electrical and computer engineering at University of Tehran.

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  1. School of Electrical and Computer Engineering, University of Tehran, P. O. Box 14395-515, Tehran, Iran

    Morteza Rahimian & Morteza Fathipour

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  1. Morteza Rahimian
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Correspondence to Morteza Fathipour.

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Rahimian, M., Fathipour, M. Asymmetric junctionless nanowire TFET with built-in \({n}^{+}\) source pocket emphasizing on energy band modification. J Comput Electron 15, 1297–1307 (2016). https://doi.org/10.1007/s10825-016-0895-1

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