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Investigation of transient responses of nanoscale transistors by deterministic solution of the time-dependent BTE

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In this work, the transient characteristics of nanoscale field-effect transistors (FETs) have been investigated using a deterministic solver based on the time-dependent multi-subband Boltzmann transport equation (BTE). The response to a step signal superimposed on the gate or drain electrode is simulated. The transient process can be understood as a combination of electrostatic and transport relaxation. The extracted transient relaxation time for the drain current, which is unrelated to the direct-current (DC) shift, is important for transient device modeling.

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Acknowledgments

This work was supported by the National Fundamental Basic Research Program of China under Grant 2011CBA00604 and the National Natural Science Foundation of China under Grants 91230107, 91434201, and 61404005.

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Authors and Affiliations

  1. Institute of Microelectronics, Peking University, 100871, Beijing, China

    Shaoyan Di, Kai Zhao, Gang Du & Xiaoyan Liu

  2. CAPT, HEDPS, IFSA Collaborative Innovation Center of MoE, LMAM & School of Mathematical Sciences, Peking University, Beijing, China

    Tiao Lu

  3. School of Information and Communication, Beijing Information Science and Technology University, 100101, Beijing, China

    Kai Zhao

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  1. Shaoyan Di
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  2. Kai Zhao
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  3. Tiao Lu
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  4. Gang Du
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  5. Xiaoyan Liu
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Correspondence to Kai Zhao.

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Di, S., Zhao, K., Lu, T. et al. Investigation of transient responses of nanoscale transistors by deterministic solution of the time-dependent BTE. J Comput Electron 15, 770–777 (2016). https://doi.org/10.1007/s10825-016-0818-1

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  • DOI: https://doi.org/10.1007/s10825-016-0818-1

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