Abstract
The longitudinal piezoresistance of the p-type silicon nanowires oriented along the 〈100〉, 〈110〉 and 〈111〉 crystallographic directions is examined at high uniaxial compressive and tensile elastic stresses ∼1 GPa. The detail research on base of the six-band model of the valence band involves quantum kinetic approach to calculation of the kinetic coefficients (conductivity, mobility) in classical nanowires with diameter that is significant higher the de Broglie wavelength of the band carriers. Two mechanisms of scattering (charged impurities and longitudinal acoustic phonons) are investigated. Qualitative agreement has been reached between calculated and known experimental data. A quantitative agreement with experiment is obtained in assumption about a formation of the stress concentration (stress raisers) in regions of nanowires that are depleted by the band carriers.
Similar content being viewed by others
References
Nakamura, K., Viet Dao, D., Isono, Y., Toriyama, T., Sugiyama, S.: Electronic states and piezoresistivity in silicon nanowires. In: Prete, P. (ed.) INTECH (2010). ISBN: 978-953-7619-79-4. Available from: http://sciyo.com/articles/show/title/electronic-states-and-piezoresistivity-in-silicon-nanowires
Toriyama, T., Funai, D., Sugiyama, S.: Piezoresistance measurement on single crystal silicon nanowires. J. Appl. Phys. 93, 561–565 (2003)
Toriyama, T., Sugiyama, S.: Single crystal silicon piezoresistive nano-wire bridge. Sens. Actuators A, Phys. 108, 244–249 (2003)
He, R.R., Yang, P.D.: Giant piezoresistance effect in silicon nanowires. Nat. Nanotechnol. 1, 42–46 (2006)
Reck, K., Richter, J., Hansen, O., Thomsen, E.V.: Piezoresistive effect in top-down fabricated silicon nanowires. In: IEEE 21st International Conference on Micro Electro Mechanical Systems, pp. 717–720 (2008)
Reck, K., Richter, J., Hansen, O., Thomsen, E.V.: Increased piezoresistive effect in crystalline and polycrystalline Si nanowires. In: Nanotechnology 2008: Materials, Fabrication, Particles, and Characterization—Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, vol. 1, pp. 920–923 (2008)
Neuzil, P., Wong, C.C., Reboud, J.: Electrically controlled giant piezoresistance in silicon nanowires. Nano Lett. 10, 1248–1252 (2010)
Cao, J.X., Gong, X.G., Wu, R.Q.: Giant piezoresistance and its origin in Si(111) nanowires: First-principles calculations. Phys. Rev. B 75, 233302 (2007)
Rowe, A.C.H.: Silicon nanowires feel the pinch. Nat. Nanotechnol. 3, 311–312 (2008)
Nakamura, K., Isono, Y., Toriyama, T., Sugiyama, S.: First-principles simulation on orientation dependence of piezoresistance properties in silicon nanowires. Jpn. J. Appl. Phys. 48, 06FG09 (2009)
Nakamura, K., Dao, Dz.V., Tung, B.Th., Toriyama, T., Sugiyama, S.: Piezoresistive effect in silicon nanowires—a comprehensive analysis based on first-principles calculations. In: International Symposium on Micro-NanoMechatronics and Human Science, pp. 38–43 (2009)
Pramanik, C., Banerjee, S., Saha, H., Sarkar, C.K.: Piezoresistivity of silicon quantum well wire. Nanotechnology 17, 3209–3214 (2006)
Milne, J.S., Arscott, S., Renner, C., Rowe, A.C.H.: On giant piezoresistance effects in silicon nanowires and microwires. Phys. Rev. Lett. 105, 226802 (2010)
Heinzel, Th.: Mesoscopic Electronics in Solid State Nanostructures. Wiley-VCH, New York (2007)
Hasegawa, H.: Theory of cyclotron resonance in strained silicon crystals. Phys. Rev. 29, 1029–1040 (1963)
Hensel, J.C., Feher, G.: Cyclotron resonance experiments in uniaxially stressed silicon: valence band inverse mass parameters and deformation potentials. Phys. Rev. 129, 1041–1062 (1963)
Bir, G.L., Pikus, G.E.: Symmetry and Strain Induced Effects in Semiconductors. Wiley, New York (1974)
Kim, C.K., Cardona, M., Rodriguez, S.: Effect of free carriers on the elastic constants of p-type silicon and germanium. Phys. Rev. B 13, 5429–5441 (1976)
Kozlovskiy, S.I., Nedostup, V.V., Boiko, I.I.: First-order piezoresistance coefficients in heavily doped p-type silicon crystals. Sens. Actuators A, Phys. 133, 72–81 (2007)
Boiko, I.I.: Kinetics of Electron Gas That Interacts with Fluctuating Potential. Naukova Dumka, Kiev (1993) (in Russian)
Boiko, I.I., Sirenko, Yu.M., Vasilopoulos, P.: Dielectric formalism for a quasi-one dimensional electron gas. 1. Quantum transport equation. Phys. Rev. B 43, 7216–7223 (1991)
Boiko, I.I., Kozlovskiy, S.I.: Investigation of conductivity and piezoresistance of n-type silicon on basis of quantum kinetic equation and model distribution function. Sens. Actuators A, Phys. 147, 17–33 (2008)
Hoffmann, S., Moser, U.B., Michler, J., Christiansen, S.H., Schmidt, V., Senz, S., Werner, P., Glosele, U., Ballif, Ch.: Measurement of the bending strength of vapor-liquid-solid grown silicon nanowires. Nano Lett. 6(4), 622–625 (2006)
Yu, P.Y., Cardona, M.: Fundamentals of Semiconductors. Physics and Material Properties. Springer, Berlin (2002)
Bir, G.L., Normantas, E., Picus, G.E.: Galvanomagnetic effects in semiconductors with degenerated bands. Sov. Phys., Solid State 4(5), 867–877 (1962)
Freund, L.B., Suresh, S.: Thin Film Materials: Stress, Defect Formation, and Surface Evolution. Cambridge University Press, Cambridge (2003)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Kozlovskiy, S.I., Sharan, N.N. Piezoresistive effect in p-type silicon classical nanowires at high uniaxial strains. J Comput Electron 10, 258–267 (2011). https://doi.org/10.1007/s10825-011-0362-y
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10825-011-0362-y