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Subthreshold behavior optimization of nanoscale Graded Channel Gate Stack Double Gate (GCGSDG) MOSFET using multi-objective genetic algorithms

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Abstract

In this paper, a multi-objective genetic algorithms-based approach is proposed to study and optimize the subthreshold behavior of Graded Channel Gate Stack Double Gate (GCGSDG) MOSFET for nanoscale CMOS digital applications. The subthreshold parameters such as threshold voltage, drain induced barrier lowering (DIBL), subthreshold swing and OFF-current have been ascertained and mathematical models have been proposed. The proposed mathematical models are used to formulate the objectives functions, which are the pre-requisite of genetic algorithm. The overall objective function is formulated by means of weighted sum approach. Thus, the proposed approach is used to search for optimal subthreshold parameters to obtain better electrical performances of the devices for digital application.

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References

  1. Djeffal, F., Meguellati, M., Benhaya, A.: Physica E, Low-Dimens. Syst. Nanostruct. 41, 2009 (1872)

    Google Scholar 

  2. Ghoggali, Z., Djeffal, F., Lakhdar, N.: Int. J. Electron. 97, 119 (2010)

    Article  Google Scholar 

  3. Tsormpatzoglou, A., Dimitriadis, C.-A., Clerc, R., Rafhay, Q., Pananakakis, G., Ghibaudo, G.: IEEE Trans. Electron Devices 54, 1943 (2007)

    Article  Google Scholar 

  4. Tsormpatzoglou, A., Dimitriadis, C.-A., Clerc, R., Pananakakis, G., Ghibaudo, G.: IEEE Trans. Electron Devices 55, 2512 (2008)

    Article  Google Scholar 

  5. Dey, A., Chakravorty, A., DasGupta, N., DasGupta, A.: IEEE Trans. Electron Devices 55, 3442 (2008)

    Article  Google Scholar 

  6. Djeffal, F., Chahdi, M., Benhaya, A., Hafiane, M.L.: Solid-State Electron. 51, 26 (2007)

    Article  Google Scholar 

  7. Chang, P.-C., Hsieh, J.-C., Wang, C.-Y.: Appl. Soft Comput. 7, 800 (2007)

    Article  Google Scholar 

  8. Holland, J.H.: Adaptation in Natural and Artificial Systems. The University of Michigan Press, Ann Arbor (1975)

    Google Scholar 

  9. Murata, T., Ishibuchi, H., Tanaka, H.: Comput. Ind. Eng. 30, 957 (1996)

    Article  Google Scholar 

  10. Atlas User’s manual, SILVACO TCAD (2008)

  11. Regnery, S., Thomas, R., Ehrhart, P., Waser, R.: J. Appl. Phys. 97, 073521 (2005)

    Article  Google Scholar 

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Authors and Affiliations

  1. LEA, Department of Electronics, University of Batna, 05000, Batna, Algeria

    T. Bendib, F. Djeffal & D. Arar

  2. LEPCM, University of Batna, Batna, 05000, Algeria

    F. Djeffal

Authors
  1. T. Bendib
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  2. F. Djeffal
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  3. D. Arar
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Correspondence to F. Djeffal.

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Bendib, T., Djeffal, F. & Arar, D. Subthreshold behavior optimization of nanoscale Graded Channel Gate Stack Double Gate (GCGSDG) MOSFET using multi-objective genetic algorithms. J Comput Electron 10, 210–215 (2011). https://doi.org/10.1007/s10825-011-0349-8

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  • DOI: https://doi.org/10.1007/s10825-011-0349-8

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