Abstract
In this paper numerical aspects of deterministic multisubband device simulations are presented for strained double gate PMOSFETs including magnetotransport. The simulations are based on a self-consistent solution of the multisubband Boltzmann transport equation (BTE), 6×6 k⋅p Schrödinger equation (SE) and Poisson equation (PE). For accurate and efficient calculation of the subband structure, an efficient discretization of the 2D k-space combined with a monotonic cubic spline interpolation is employed. The multisubband BTE is solved with a deterministic method based on a Fourier expansion of the distribution function. The Fourier series is found to converge rapidly for nanoscale double gate PMOSFETs. A convergence enhancement method for the Gummel type SE-PE-BTE loop by solving the BTE-PE simultaneously is proposed.
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Pham, AT., Jungemann, C. & Meinerzhagen, B. On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs. J Comput Electron 8, 242–266 (2009). https://doi.org/10.1007/s10825-009-0301-3
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DOI: https://doi.org/10.1007/s10825-009-0301-3