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Room temperature carrier transport in graphene

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Abstract

Graphene is a novel new material with an unusual zero-gap band structure, where electrons and holes are closely connected through a relativistic Dirac equation. It is of interest to study the various scattering mechanisms and the transport through device structures fabricated on this new material. Here, we use Rode’s method to study the transport through gated graphene devices. The results are compared with recent results obtained for both back-gates and electrochemical gates. The transport is dominated by the trapped charge at the graphene-SiO2, but phonon scattering is shown to be important.

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Author notes

  1. F. Chen

    Present address: Harvard University, Cambridge, MA, USA

Authors and Affiliations

  1. Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ, 85287, USA

    R. S. Shishir, F. Chen, J. Xia, N. J. Tao & D. K. Ferry

  2. Department of Electrical Engineering and the Biodesign Institute, Arizona State University, Tempe, AZ, 85287, USA

    F. Chen, J. Xia & N. J. Tao

Authors
  1. R. S. Shishir
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  2. F. Chen
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  3. J. Xia
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  4. N. J. Tao
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  5. D. K. Ferry
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Corresponding author

Correspondence to D. K. Ferry.

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Shishir, R.S., Chen, F., Xia, J. et al. Room temperature carrier transport in graphene. J Comput Electron 8, 43–50 (2009). https://doi.org/10.1007/s10825-009-0278-y

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  • DOI: https://doi.org/10.1007/s10825-009-0278-y

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