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Unified simulation of transport and luminescence in optoelectronic nanostructures

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Abstract

Computer simulation of microscopic transport and light emission in semiconductor nanostructures is often restricted to an isolated system of a single quantum well, wire or dot. In this work we report on the development of a simulator for devices with various kinds of nanostructures which exhibit quantization in different dimensionalities. Our approach is based upon the partition of the carrier densities within each quantization region into bound and unbound populations. A bound carrier is treated fully coherent in the directions of confinement, whereas it is assumed to be totally incoherent with a motion driven by classical drift and diffusion in the remaining directions. Coupling of the populations takes place through electrostatics and carrier capture. We illustrate the applicability of our approach with a well-wire structure.

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Authors and Affiliations

  1. Integrated Systems Laboratory, Department of Information Technology and Electrical Engineering, ETH Zurich, Gloriastrasse 35, 8092, Zurich, Switzerland

    Sebastian Steiger, Ratko G. Veprek & Bernd Witzigmann

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  1. Sebastian Steiger
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  2. Ratko G. Veprek
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  3. Bernd Witzigmann
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Correspondence to Sebastian Steiger.

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Steiger, S., Veprek, R.G. & Witzigmann, B. Unified simulation of transport and luminescence in optoelectronic nanostructures. J Comput Electron 7, 509–520 (2008). https://doi.org/10.1007/s10825-008-0261-z

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  • DOI: https://doi.org/10.1007/s10825-008-0261-z

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