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Scaling effects in AlGaN/GaN HEMTs: Comparison between Monte Carlo simulations and experimental data

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Abstract

AlGaN/GaN based HEMTs are showing an unexpected behaviour of the transport characteristic compared to the GaAs and InGaAs HEMT technology. A downscaling of the source-gate and gate-drain lengths of GaN HEMTs produced a maximum output current increase, which is not compatible with a framework where the electrons velocity is saturated. Monte Carlo simulations are able to reproduce this experimental behaviour showing how this phenomena is related to intrinsic velocity-field relation in GaN. We attribute the lack of overshooting phenomena to the high scattering rate of III–V nitrides and to the strong localisation of the high electric field region. We also have found that such suppression could be avoided with a proper scaling of the devices.

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Authors and Affiliations

  1. Department of Electronic Engineering, University of Rome “Tor Vergata,”, Rome, Italy

    S. Russo & A. Di Carlo

  2. IMEC/Microsystems, Components and Packaging (MCP), Leuven, Belgium

    W. Ruythooren, J. Derluyn & M. Germain

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  1. S. Russo
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  2. A. Di Carlo
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  3. W. Ruythooren
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  4. J. Derluyn
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  5. M. Germain
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Correspondence to S. Russo.

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Russo, S., Di Carlo, A., Ruythooren, W. et al. Scaling effects in AlGaN/GaN HEMTs: Comparison between Monte Carlo simulations and experimental data. J Comput Electron 5, 109–113 (2006). https://doi.org/10.1007/s10825-006-8828-z

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  • DOI: https://doi.org/10.1007/s10825-006-8828-z

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