Skip to main content
Log in

Dissipative transport in CNTFETs

  • Published:
Journal of Computational Electronics Aims and scope Submit manuscript

Abstract

Based on the non-equilibrium Green’s function formalism the performance of carbon nanotube field-effect transistors has been studied. The effects of elastic scattering and the impact of parameters of inelastic scattering, such as electron-phonon coupling strength and phonon energy, on the device performance are analyzed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. Javey, A et al.: Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays. Nano Lett. 4(7), 1319 (2004)

    Article  Google Scholar 

  2. Appenzeller, J et al.: Tunneling versus thermionic emission in one-dimensional semiconductors. Phys. Rev. Lett. 92, 048301 (2004)

    Article  Google Scholar 

  3. Heinze, S et al.: Carbon nanotubes as Schottky barrier transistors. Phys. Rev. Lett. 89, 106801 (2002)

    Article  Google Scholar 

  4. Javey, A et al.: Ballistic carbon nanotube field-effect transistors. Lett. Nature 424(6949), 654 (2003)

    Article  Google Scholar 

  5. Pourfath, M et al.: Separated carrier injection control in carbon nanotube field-effect transistors. J. Appl. Phys. 97, 1061031 (2005)

    Google Scholar 

  6. Pourfath, M et al.: Improving the ambipolar behavior of Schottky barrier carbon nanotube field effect transistors. In: Proc. ESSDERC 429–432 (2004)

  7. Martel, R et al.: Ambipolar electrical transport in semiconducting single-wall carbon nanotubes. Phys. Rev. Lett. 87, 256805 (2001)

    Article  Google Scholar 

  8. Guo, J et al.: A numerical study of scaling issues for Schottky barrier carbon nanotube transistors. IEEE Trans. Electron Devices 51(2), 172 (2004)

    Article  Google Scholar 

  9. Venugopal, R et al.: Simulating quantum transport in nanoscale transistors: real versus mode-space approaches. J. Appl. Phys. 92(7), 3730 (2002)

    Article  Google Scholar 

  10. Svizhenko, A., Anantram, M.: Effect of scattering and contacts on current and electrostatics in carbon nanotubes. Phys. Rev. B 72, 085430 (2005)

    Article  Google Scholar 

  11. Tian, W et al.: Conductance spectra of molecular wires. J. Chem. Phys 109(7), 2874 (1998)

    Article  Google Scholar 

  12. Datta, S.: Electronic Transport in Mesoscopic Systems. Cambridge University Press (1995)

  13. Mahan, G.: Electron-optical phonon interaction in carbon nanotubes. Phys. Rev. B 68, 125409 (2003)

    Article  Google Scholar 

  14. Pourfath, M., Kosina, H.: Fast convergent Schrödinger-Poisson solver for the static and dynamic analysis of carbon nanotube field effect transistors. Lecture Notes in Computer Science 3743, 578 (2006)

    Article  Google Scholar 

  15. Guo, J., Lundstrom, M.: Role of phonon scattering in carbon nanotube field-effect transistors. Appl. Phys. Lett. 86, 193103 (2005)

    Article  Google Scholar 

  16. John, D et al.: Quantum capacitance in nanoscale device modeling. J. Appl. Phys. 96(9), 5180 (2004)

    Article  Google Scholar 

  17. Guo, J et al.: Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors. In: IEDM Tech. Dig. pp. 703–706 (2004)

  18. Park, J et al.: Electron-phonon scattering in metallic single-walled carbon nanotubes. Nano Lett. 4(3), 517 (2004)

    Article  Google Scholar 

  19. Koswatta, S. et al.: Ballisticity of nanotube FETs: role of phonon energy and gate bias. Cond-mat/0511723 (2005)

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Mahdi Pourfath.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Pourfath, M., Kosina, H. & Selberherr, S. Dissipative transport in CNTFETs. J Comput Electron 6, 321–324 (2007). https://doi.org/10.1007/s10825-006-0113-7

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10825-006-0113-7

Keywords

Navigation