Abstract
\(45\,\pm \,5\,{\mathrm {\upmu m}}\)-thick Al:ZnO films were galvanostatically grown. The propensity for \({\mathrm{Al}}^{3+}\) to both be absorbed into the ZnO film as well as react with \({\mathrm{OH}}^-\) in the growth solution required developing a method to continuously introduce new dopant to the growth solution to maintain dopant levels throughout the deposition. Film thickness, transparency, morphology, aluminium content, crystallinity, and electrical resistivity as a function of approximate \({\mathrm{Al}}({\mathrm{NO}}_3)_3\) dopant concentration was examined. Limits in dopant concentration during growth were determined, with concentrations exceeding \(10\,{\mathrm {\upmu mol\,L^{-1}}}\) causing layers of aluminium hydroxide to deposit on the film. Low-temperature annealing was performed to encourage thermal decomposition of any remaining \({\mathrm{Zn}}({\mathrm{OH}})_2\) in the film, and the resulting effects on film opacity, morphology, and resistivity were described. A transparent film consisting of 1.72% molar concentration of aluminium was produced with a through-film resistivity of \(400\pm 100\,{\mathrm {\Omega \,cm}}\), \(25{\times}\) less than the undoped film.
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Acknowledgements
This work was supported by the Natural Sciences and Engineering Research Council (NSERC) (Grant Number RGPIN 327628-11), the Canadian Foundation for Innovation (CFI), and the Canada Research Chairs program (Grant Number 950-228738). The authors also thank Suresha Mahadeva for his assistance with film characterization.
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Sielmann, C., Siller, V., Stoeber, B. et al. Thick-film electrochemical growth of Al-doped zinc oxide. J Appl Electrochem 47, 85–93 (2017). https://doi.org/10.1007/s10800-016-1019-0
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DOI: https://doi.org/10.1007/s10800-016-1019-0