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Influence of Point Defects on the Electrical Conductivity and Dielectric Properties of Langasite

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Abstract

The temperature-dependent electrical conductivity and dielectric permittivity and room-temperature optical absorption spectra of La3Ga5SiO14 (langasite) crystals grown under different conditions are measured. The resistivity and peak-loss temperature t tanδ of the crystals are shown to be determined by the concentration of oxygen vacancies, which originate from changes in melt composition during crystal growth. The t tanδ of langasite is shown for the first time to be anisotropic (measurements on Z- and X-cuts). The properties of the crystals are suitable for the fabrication of stable piezoelectric elements capable of operating above 600°C.

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Authors and Affiliations

  1. Lomonosov State Academy of Fine Chemical Technology, pr. Vernadskogo 86, Moscow, 119571, Russia

    E. N. Domoroshchina & G. M. Kuz'micheva

  2. All-Russia Research Institute of Mineral Materials Synthesis, Institutskaya ul. 1, Aleksandrov, Vladimir oblast, 601650, Russia

    A. B. Dubovskii & G. V. Semenkovich

Authors
  1. E. N. Domoroshchina
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  2. A. B. Dubovskii
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  3. G. M. Kuz'micheva
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  4. G. V. Semenkovich
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__________

Translated from Neorganicheskie Materialy, Vol. 41, No. 11, 2005, pp. 1378–1381.

Original Russian Text Copyright © 2005 by Domoroshchina, Dubovskii, Kuz'micheva, Semenkovich.

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Domoroshchina, E.N., Dubovskii, A.B., Kuz'micheva, G.M. et al. Influence of Point Defects on the Electrical Conductivity and Dielectric Properties of Langasite. Inorg Mater 41, 1218–1221 (2005). https://doi.org/10.1007/s10789-005-0290-y

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  • DOI: https://doi.org/10.1007/s10789-005-0290-y

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