Abstract
Single crystals of AgGaSe2-GeSe2 γ-solid solutions are investigated. The AgxGaxGe1 − x Se2 (0.12 ≤ x ≤ 0.25) solid solutions are anisotropic p-type semiconductors with a 290-K band gap of about 0.26 eV. The high defect density in the crystals results in static disordering and the formation of density-of-states tails in the band gap, reducing their transmittance. Cu doping leads to bleaching in the optical window of the crystals (visible through near-IR spectral region). A model is proposed for the interaction between the dopant atoms and structural defects in the crystals. The radiation hardness and laser damage threshold of AgxGaxGe1 − x Se2 are evaluated.
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Translated from Neorganicheskie Materialy, Vol. 41, No. 9, 2005, pp. 1054–1057.
Original Russian Text Copyright © 2005 by Davidyuk, Olekseyuk, Shavarova, Gorgut.
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Davidyuk, G.E., Olekseyuk, I.D., Shavarova, G.P. et al. Effect of Copper Doping on the Optical Properties of AgxGaxGe1 − x Se2 (0.12 ≤ x ≤ 0.25) Single Crystals. Inorg Mater 41, 923–926 (2005). https://doi.org/10.1007/s10789-005-0238-2
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DOI: https://doi.org/10.1007/s10789-005-0238-2