Abstract
This paper describes the development of an advanced method to measure the normal-to-plane thermal conductivity of very-thin insulating films. In this method the metal film layer, which is deposited on thin insulating films, is Joule heated periodically and the ac-temperature response at the center of the metal film surface is measured by a thermo-reflectance technique. The one-dimensional thermal conduction equation of the three-layered system was solved analytically, and a quite simple and accurate approximate equation was derived. In this method, calibration factors of the thermo-reflectance coefficient were determined using the known thermal effusivity of the substrate. The present method was examined for thermally-oxidized SiO2 films (1000--20 nm thick) on a silicon wafer. The present results of the thermal conductivity agree with those of VAMAS TWA23 within ±10%.
Similar content being viewed by others
References
N. Taketoshi T. Baba A. Ono (1999) Jpn. J. Appl. Phys. 3 L1268
S. M. Lee D. G. Cahill (1997) J. Appl. Phys. 81 2950
R. Kato, A. Maesono, and I. Hatta, Proc. 21st Jpn. Symp. Thermophysic. Prop. (2000), pp. 10–12.
R. Kato and I. Hatta, Proc. 23rd Jpn. Symp. Thermophys. Prop. (2002), pp. 265–267.
Thermophysical Properties Handbook (Japanese Thermophysical Society, Yokendo, Ltd., 1990).
A. Feldman, Results of a Round Robin on Thin Film Thermal Conductivity, presented at 14th Symp. Thermophys. Props. (Boulder, Colorado 2000).
A. Feldman, VAMAS TWA23 (2000).
R. Kato A. Maesono R. P. Tye (2001) Int. J. Thermophys. 22 617
Author information
Authors and Affiliations
Corresponding author
Additional information
Paper presented at the Fifteenth Symposium on Thermophysical Properties, June 22--27, 2003, Boulder, Colorado, U.S.A.
Rights and permissions
About this article
Cite this article
Kato, R., Hatta, I. Thermal Conductivity Measurement of Thermally-Oxidized SiO2 Films on a Silicon Wafer Using a Thermo-Reflectance Technique. Int J Thermophys 26, 179–190 (2005). https://doi.org/10.1007/s10765-005-2365-z
Issue Date:
DOI: https://doi.org/10.1007/s10765-005-2365-z