Abstract
To decrease the loss of a parametric two-circuit amplifier is a main problem of paper. The use of dielectric inserts with inclined face as a circuit of non-load frequency is considered in the study. Results of electrodynamic simulation of oscillatory processes in a dielectric insert in a rectangular waveguide are represented. Experimental amplitude and noise characteristics of the breadboard model of the parametric amplifier on the basis of the considered filter are given. Within the range of 60 GHz the amplification factor no less than 12 dB over a half-power bandwidth of 1.2 GHz has been obtained with a noise temperature of 550 K.
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Belous, O., Fisun, A., Rud’, L. et al. Low-Noise Semiconductor Amplifier of Middle Part of Millimeter-Wave Range. Int J Infrared Milli Waves 26, 545–553 (2005). https://doi.org/10.1007/s10762-005-4071-0
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DOI: https://doi.org/10.1007/s10762-005-4071-0