Abstract
This paper presents a single-pole double-throw CMOS transmit/receiver (T/R) switch in a standard 0.18 μm CMOS process. The T/R switch uses 6-stacked body-floated N-MOSFETs to enhance linearity, and a negative-voltage controller integrated on a single die with the power switch cell. A complementary DICSON charge pump is employed to generate the negative voltages and three-step level shifters are used to control the switch cell. The fabricated T/R switch has P1dB of 33.8 and 32.6 dBm at 900 and 1,800 MHz from a 2 V supply, respectively. The insertion losses of TX are 0.7 and 1.1 dB at 900 and 1,800 MHz, respectively. The isolations from TX to ANT and RX to ANT are >25 dB at both frequencies, and the return losses are >20 dB. The proposed T/R switch shows comparable or better performance compared to the previously reported T/R switches without the switch controller.
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Acknowledgments
The authors would like to thank Samsung Electro-Mechanics Corp., for their valuable discussion and providing an opportunity of making the test chips. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2010-0014757) and the Chung-Ang University Excellent Student Scholarship in 2013.
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Yun, S., Lee, JY., Ha, KW. et al. A fully integrated 33.8-dBm bulk CMOS T/R switch with a negative-voltage switch controller. Analog Integr Circ Sig Process 77, 557–565 (2013). https://doi.org/10.1007/s10470-013-0201-0
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DOI: https://doi.org/10.1007/s10470-013-0201-0