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A new high-speed, high-resolution open-loop CMOS sample and hold

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Abstract

A new open loop, high resolution CMOS sample and hold (S/H) circuit is introduced in this article. This circuit is constructed based on a new method which leads to a great reduction in dependency of the storing charge of the holding capacitors to the charge injection of transistors. It is a combination of dummy switches and auxiliary capacitors in order to decrease the voltage spikes that are produced during the sampling mode. Due to the high linearity feature of our proposed design in comparison with previous works, it is reached to a great improvement in signal to noise and distortion ratio up to about 15 dB and it’s ENOB is equivalent with about 16 bits. Another advantages of our proposed design are it’s lower power dissipation and it’s high input voltage range. Also the optimum functionality of our proposed circuit does not damaged by the threshold voltage’s variations in different corners. As our proposed S/H circuit has been designed in open loop structure, it is suitable for high speed applications.

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Authors and Affiliations

  1. Microelectronics Research Laboratory, Urmia University, Urmia, Iran

    Alireza Abolhasani, Mohammad Tohidi, Khayrollah Hadidi & Abdollah Khoei

Authors
  1. Alireza Abolhasani
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  2. Mohammad Tohidi
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  3. Khayrollah Hadidi
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  4. Abdollah Khoei
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Correspondence to Alireza Abolhasani.

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Abolhasani, A., Tohidi, M., Hadidi, K. et al. A new high-speed, high-resolution open-loop CMOS sample and hold. Analog Integr Circ Sig Process 78, 409–419 (2014). https://doi.org/10.1007/s10470-013-0158-z

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  • DOI: https://doi.org/10.1007/s10470-013-0158-z

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