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Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors

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Abstract:

A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.

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Authors and Affiliations

  1. Fachbereich Physik und wissenschaftliches Zentrum für Materialwissenschaften, Philipps-Universität Marburg, Renthof 5, 35032, Marburg, Germany

    D. Brinkmann, J.E. Golub, S.W. Koch, P. Thomas & I. Varga

  2. Institut de Physique Appliquée, École Polytechnique Fédérale de Lausanne, 1015, Lausanne, Switzerland

    K. Maschke

Authors
  1. D. Brinkmann
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  2. J.E. Golub
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  3. S.W. Koch
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  4. P. Thomas
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  5. K. Maschke
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  6. I. Varga
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Additional information

Received 4 September and Received in final form 26 November 1998

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Brinkmann, D., Golub, J., Koch, S. et al. Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors. Eur. Phys. J. B 10, 145–148 (1999). https://doi.org/10.1007/s100510050837

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  • DOI: https://doi.org/10.1007/s100510050837

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