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Optical design of bent rib waveguide with MOS cross-section

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Abstract

We provided a single-mode bent MOS-cross-section rib waveguide design with 0.9 dB/cm bending loss at 25 μm bending radius. The peak position for the TE-like mode was tuned to the gate oxide around which the maximum amount of free carriers are accumulated to optimize the free carrier dispersion effect.

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Authors and Affiliations

  1. Industrial Technology Research Institute, Chutung, Hsinchu, Taiwan, 31040, R.O.C.

    Chih T’sung Shih

  2. Institute of Photonics Technologies, National Tsing Hua University, Hsinchu, Taiwan, 30013, R.O.C.

    Chih T’sung Shih, Zhi Wei Zeng, Yin Cheng Chang & Shiuh Chao

  3. National Nano Device Laboratories, Hsinchu, Taiwan, 30013, R.O.C.

    Yao-Jen Lee

Authors
  1. Chih T’sung Shih
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  2. Zhi Wei Zeng
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  3. Yin Cheng Chang
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  4. Yao-Jen Lee
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  5. Shiuh Chao
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Correspondence to Shiuh Chao.

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Shih, C.T., Zeng, Z.W., Chang, Y.C. et al. Optical design of bent rib waveguide with MOS cross-section. OPT REV 16, 413–415 (2009). https://doi.org/10.1007/s10043-009-0079-3

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  • DOI: https://doi.org/10.1007/s10043-009-0079-3

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