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Electrochemical deposition of Bi2Te3 for thermoelectric microdevices

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Abstract

The electrolyses of solutions of bismuth oxide and tellurium oxide in nitric acid with molar ratios of Bi:Te=3:3–4:3 lead to cathodic deposits of films of bismuth telluride (Bi2Te3), an n-type semiconductor. Current densities of 2–5 mA/cm2 were applied. Voltammetric investigations showed that Bi2Te3 deposition occurred at potentials more negative than −0.125 V (Ag/AgCl, 3 M KCl). The deposit was identified as bismuth telluride (γ-phase) by X-ray analysis. Hall-effect measurements verified the n-type semiconducting behaviour. The films can be deposited in microstructures for thermoelectric microdevices like thermoelectric batteries or thermoelectric sensors.

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Acknowledgements

This study was supported by the BMWi (Bundesministerium für Wirtschaft) and the AiF (Arbeitsgemeinschaft industrieller Forschungsvereinigungen "Otto von Guericke" e.V.), research no. 12118 BR. The authors are grateful to Dr. B. Hahne (Institute of Chemical Technology and Polymer Chemistry of the Martin-Luther-University Halle, Germany) and Dr. O. Rademacher (Institut of Inorganic Chemistry of the Technical University Dresden, Germany) for performing the X-ray diffraction measurements.

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Authors and Affiliations

  1. Institute of Physical Chemistry and Electrochemistry, Technische Universitaet Dresden, 01062 , Dresden, Germany

    Kerstin Tittes, Andreas Bund & Waldfried Plieth

  2. Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Strasse 40, 01187 , Dresden, Germany

    Anders Bentien & Silke Paschen

  3. Semiconductor Technology and Microsystems Laboratory, Technische Universitaet Dresden, 01062 , Dresden, Germany

    Matthias Plötner, Hartmut Gräfe & Wolf-Joachim Fischer

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  1. Kerstin Tittes
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  2. Andreas Bund
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  3. Waldfried Plieth
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  4. Anders Bentien
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  5. Silke Paschen
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  6. Matthias Plötner
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  7. Hartmut Gräfe
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  8. Wolf-Joachim Fischer
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Correspondence to Waldfried Plieth.

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Tittes, K., Bund, A., Plieth, W. et al. Electrochemical deposition of Bi2Te3 for thermoelectric microdevices. J Solid State Electrochem 7, 714–723 (2003). https://doi.org/10.1007/s10008-003-0378-8

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  • DOI: https://doi.org/10.1007/s10008-003-0378-8

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