Abstract
We studied the doping effects on the electronic and structural properties of graphene upon interaction with phenol. Calculations were performed within the periodic density functional theory as implemented in PWscf code of the Quantum Espresso package. Graphene layers were modeled using 3 × 3 and 4 × 4 periodic supercells. Doping was explored considering boron (B), aluminum (Al) and gallium (Ga) atoms. The results showed that pristine graphene and graphene doped with B atoms interacting with phenol display similar structural and electronic properties, exhibiting weak physical interactions. However, when the doping is with Al or Ga , the results are quite different. Al and Ga doping induces a stronger interaction between the phenol molecule and the doped layer, yielding chemical adsorption. In all cases, the zero gap energy characteristic is unchanged. The Dirac lineal dispersion relation is preserved in both pristine graphene and B-doped graphene.
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Wehling TO, Katsnelson MI, Lichtenstein AI (2009) Chem Phys Lett 476:125–134
Leenaerts O, Partoens B, Peeters FM (2009) Microelectron J 40:860–862
AlZahrani AZ (2010) Appl Surf Sci 257:807–810
Banerjee S, Bhattacharyya D (2008) Comput Mater Sci 44:41–45
Lu D, Xiao Y, Yan XH, Yang YR (2011) Chem Phys Lett 515:263–268
Novoselov KS, Geim AK, Morozov SV, Jiang D, Zhang Y, Dubonos SV, Grigorieva IV, Firsov AA (2004) Science 306:666–669
Meyer JC, Geim AK, Katsnelson MI, Novoselov KS, Booth TJ, Roth S (2007) Nature 446:60–63
Khomyakov PA, Giovannetti G, Rusu PC, Brocks G, van den Brink J, Kelly PJ (2009) Phys Rev B 79:195425
Sun Y, Chen L, Zhang F, Li D, Pan H, Ye J (2010) Solid State Commun 150:1906–1910
Elias DC, Nair RR, Mohiuddin TMG, Morozov SV, Blake P, Halsall MP, Ferrari AC, Boukhvalov DW, Katsnelson MI, Geim AK, Novoselov KS (2009) Science 323:610–613
Leenaerts O, Partoens B, Peeters FM (2008) Phys Rev B 77:125416
Galicia JM, Hernández G, Chigo E (2012) J Mol Model 18:137–144
Wehling TO, Lichtenstein AI, Katsnelson MI (2008) Appl Phys Lett 9:202110
Zhang Y-H, Chen Y-B, Zhou K-G, Liu C-H, Zeng J, Zhang H-L, Peng Y (2009) Nanotechnology 20:185504
Chi M, Zhao Y-P (2012) Comput Mater Sci 56:79–84
Galicia JM, Chigo E, Romero MT, González M, Hernández G (2012) J Mol Model 18:3857–3866
Giannozzi P, Baroni S, Bonini N, Calandra M, Car R, Cavazzoni C, Ceresoli D, Chiarotti GL, Cococcioni M, Dabo I, Dal Corso A, Fabris S, Fratesi G, de Gironcoli S, Gebauer R, Gerstmann U, Gougoussis C, Kokalj A, Lazzeri M, Martin-Samos L, Marzari N, Mauri F, Mazzarello R, Paolini S, Pasquarello A, Paulatto L, Sbraccia C, Scandolo S, Sclauzero G, Seitsonen AP, Smogunov A, Umari P, Wentzcovitch RM (2009) J Phys Condens Matter 21:395502
Perdew JP, Burke K, Ernzerhof M (1996) Phys Rev Lett 77:3865
Laasonen K, Pasquarello A, Car R, Lee C, Vanderbilt D (1993) Phys Rev B 47:10142
Wu M, Caol C, Jiang JZ (2010) Nanotechnology 21:505202
Voloshina EN, Mollenhauer D, Chiappisi L, Paulus B (2011) Chem Phys Lett 510:220–223
Scott AM, Gorb L, Mobley EA, Hill FC, Leszczynski J (2012) Langmuir 28:13307–13317
Kubicki JD (2006) Environ Sci Technol 40:2298–2303
Berland K et al (2011) J Phys Condens Mater 23:135001
Zhou Y, Zhang H, Deng W (2013) Nanotechnology 24:225705
Acknowledgments
G.H.C. acknowledges the financial support of “Vicerrectoría de Investigación y Estudios de Posgrado-Benemérita Universidad Autónoma de Puebla” (VIEP-BUAP), grant 31/EXC/06-G and Cuerpo Académico Física Computacional de la Materia Condensada (BUAP-CA-191). The technical assistance of Luis Rojas at the computer center of “Instituto de Física de la Universidad Autónoma de Puebla” (IFUAP) is also acknowledged. We also grateful to “Consejo Nacional de Ciencia y Tecnología” (Conacyt) for their support through the fellowship with number 393272/259155
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Avila, Y., Cocoletzi, G.H. & Romero, M.T. First principles calculations of phenol adsorption on pristine and group III (B, Al, Ga) doped graphene layers. J Mol Model 20, 2112 (2014). https://doi.org/10.1007/s00894-014-2112-0
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DOI: https://doi.org/10.1007/s00894-014-2112-0