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Misfit-Dislocation Induced Surface Morphology of InGaAs/GaAs Heterostructures

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Abstract.

The correlation between the surface cross-hatched morphology and the interfacial misfit dislocations in partially relaxed InGaAs/GaAs heterostructures was studied by means of atomic force microscopy and electron-beam induced current mode in a scanning electron microscope. A close correspondence between the misfit-dislocation network at the interface and the surface morphology shows that the cross-hatch development results primarily from the misfit-dislocation generation. Statistical analysis of the surface roughness reveals an anisotropy in strain relaxation of the epitaxial layers, which results from an asymmetry in the misfit-dislocation formation.

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Authors and Affiliations

  1. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02-668, Warsaw, Poland

    Oksana Yastrubchak, Tadeusz Wosiński, Elżbieta Łusakowska & Tadeusz Figielski

  2. Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Konkoly-Thege út 29-33, P. O. Box 49, H-1525, Budapest, Hungary

    Attila L. Tóth

Authors
  1. Oksana Yastrubchak
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  2. Tadeusz Wosiński
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  3. Elżbieta Łusakowska
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  4. Tadeusz Figielski
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  5. Attila L. Tóth
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Correspondence to Oksana Yastrubchak.

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Yastrubchak, O., Wosiński, T., Łusakowska, E. et al. Misfit-Dislocation Induced Surface Morphology of InGaAs/GaAs Heterostructures. Microchim. Acta 145, 267–270 (2004). https://doi.org/10.1007/s00604-003-0165-3

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  • DOI: https://doi.org/10.1007/s00604-003-0165-3

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