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Design, simulation and analysis of uniform and non-uniform serpentine step structure RF MEMS switch

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Abstract

This paper presents a novel step structure of RF MEMS switch with and without uniform, non-uniform serpentine meanders, having square perforations which results with a low actuation voltage. Here, design, study, and simulation of the proposed device are evaluated in the FEM tool. By changing the span beam length of the serpentine meanders from results owing to low spring constant and a low pull-in voltage of the device as a specific length of the serpentine meander section increases. By changing the actuating area of the device by using with and with-out meandering techniques such as uniform and non-uniform serpentine type sections are also evaluated. Material optimization for beam and dielectric layer of the device also performed using Ashby’s approach. The actuation voltage is obtained as 1.51 V, the switch with a lower spring constant demonstrates a trade-off with a higher switching speed of 0.2–0.45 µm. The device with a non-uniform single meander result in high isolation is  – 72.4 dB at 27 GHz obtained in downstate of the step structure. The insertion loss of the proposed switch is below  – 0.02 dB, and the return loss received below  – 38.2 dB in the frequency range 1–30 GHz. The capacitance analysis such as up and downstate capacitance as well as the stress analysis are evaluated for the proposed meandered switch.

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References

  • Afrang S, Abbaspour-Sani E (2006) A low voltage MEMS structure for RF capacitive switches. Prog Electromagn Res 65:157–167

    Article  Google Scholar 

  • Ansari HR, Khosroabadi S (2019) Design and simulation of a novel RF MEMS shunt capacitive switch with a unique spring for Ka-band application. Microsyst Technol 25(2):531–540

    Article  Google Scholar 

  • Chan R, Lesnick R, Becher D, Feng M (2003) Low-actuation voltage RF MEMS shunt switch with cold switching lifetime of seven billion cycles. J Microelectromech Syst 12(5):713–719

    Article  Google Scholar 

  • Chan R, Lesnick R, Becher D, Feng M (2006) Low-actuation voltage RF MEMS shunt switch with cold switching lifetime of seven billion cycles. J Microelectromech Syst 12(5):713–719

    Article  Google Scholar 

  • Cho I-J, Yoon E (2010) Design and fabrication of a single membrane push-pull SPDT RF MEMS switch operated by electromagnetic actuation and electrostatic hold. J Micromech Microeng 20(3):035028

    Article  Google Scholar 

  • Cho IJ, Song T, Baek SH, Yoon E (2005) A low-voltage and low-power RF MEMS series and shunt switches actuated by combination of electromagnetic and electrostatic forces. IEEE Trans Microwave Theory Tech 53(7):2450–2457

    Article  Google Scholar 

  • Chu C-H, Shih W-P, Chung S-Y, Tsai H-C, Shing T-K, Chang P-Z (2007) A low actuation voltage electrostatic actuator for RF MEMS switch applications. J Micromech Microeng 17(8):1649

    Article  Google Scholar 

  • Dai YS, Fang DG, Zhang YF, Qi GP, Zhu J, Yu YW (2008) Research on millimeter wave DC-contact cantilever RF MEMS reflection series switches [J]. J Microwaves 3

  • Daneshmand M, Fouladi S, Mansour RR, Lisi M, Stajcer T (2009) Thermally actuated latching RF MEMS switch and its characteristics. IEEE Trans Microw Theory Tech 57(12):3229–3238

    Article  Google Scholar 

  • Fouladi S, Mansour RR (2010) Capacitive RF MEMS switches fabricated in standard 0.35-CMOS technology. IEEE Trans Microw Theory Tech 58(2):478–486

    Article  Google Scholar 

  • Fouladi S, Mansour RR (2010) Capacitive RF MEMS switches fabricated in standard 0.35-CMOS technology. EEE Trans Microw Theory Tech 58(2):478–486

    Article  Google Scholar 

  • Glickman M, Tseng P, Harrison J, Niblock T, Goldberg IB, Judy JW (2011) High-performance lateral-actuating magnetic MEMS switch. J Microelectromech Syst 20(4):842–851

    Article  Google Scholar 

  • Kim J-M, Lee S, Park J-H, Baek C-W, Kwon Y, Kim Y-K (2010) Electrostatically driven low-voltage micromechanical RF switches using robust single-crystal silicon actuators. J Micromech Microeng. 20(9):095007

    Article  Google Scholar 

  • Lakamraju NV, Phillips SM (2005) Bi-stable RF MEMS switch with low actuation voltage. Proc Int Symp Microelectron 2:1225–1228

    Google Scholar 

  • Lishchynska M, Cordero N, Slattery O, O’Mahony C (2006) Spring constant models for analysis and design of mems plates on straight or meander tethers. Sens Lett 4:200–205. https://doi.org/10.1166/sl.2006.011

    Article  Google Scholar 

  • Mafinejad Y, Kouzani A, Mafinezhad K, Mashad I (2013) Review of low actuation voltage RF MEMS electrostatic switches based on metallic and carbon alloys. J Microelectron Electron Compon Mater 43(2):85–96

    Google Scholar 

  • Mehrabi H, Hamedi M, Aminzahed I (2020) A novel design and fabrication of a micro-gripper for manipulation of micro-scale parts actuated by a bending piezoelectric. Microsyst Technol 26(5):1563–1571

    Article  Google Scholar 

  • Naji MK, Farhood AD, Ali AH (2019) Novel design and analysis of RF MEMS shunt capacitive switch for radar and satellite communications. Indonesian J Elect Eng Computer Sci (IJEECS) 15(2):971–978

    Article  Google Scholar 

  • Pacheco SP, Peroulis D, Katehi LP (2001) MEMS single-pole double-throw (SPDT) X and K-band switching circuits. In: 2001 IEEE MTT-S international microwave sympsoium digest (Cat. No. 01CH37157), vol 1. IEEE, pp 321–324

  • Park J-H, Lee H-C, Park Y-H, Kim Y-D, Ji C-H, Bu J et al (2006) A fully wafer-level packaged RF MEMS switch with low actuation voltage using a piezoelectric actuator. J Micromech Microeng 16(11):2281

    Article  Google Scholar 

  • Persano A, Cola A, De Angelis G, Taurino A, Siciliano P, Quaranta F (2011) Capacitive RF MEMS switches with tantalum-based materials. J Microelectromech Syst 20(2):365–370

    Article  Google Scholar 

  • Philippine MA, Sigmund O, Rebeiz GM, Kenny TW (2013) Topology optimization of stressed capacitive RF MEMS switches. J Microelectromech Syst 22(1):206–215

    Article  Google Scholar 

  • Rebeiz GM (2003) RF MEMS Theory, Design and Technology, 2nd edu. Wiley, New Jersy

    Google Scholar 

  • Shalaby MM, Wang Z, Chow LL-W, Jensen BD, Volakis JL, Kurabayashi K et al (2009) Robust design of RF-MEMS cantilever switches using contact physics modeling. IEEE Trans Industr Electron 56(4):1012–1021

    Article  Google Scholar 

  • Shekhar S, Vinoy KJ, Ananthasuresh GK (2014) Design, fabrication and characterization of capacitive RF MEMS switches with low pull-in voltage. In: 2014 IEEE international microwave and RF conference (IMaRC). IEEE, pp 182–185

  • Shojaei-Asanjan D, Bakri-Kassem M, Mansour RR (2019) Analysis of thermally actuated RF-MEMS switches for power limiter applications. J Microelectromech Syst 28(1):107–113

    Article  Google Scholar 

  • Singh T (2015) Design and finite element modeling of series-shunt configuration based RF MEMS switch for high isolation operation in K-Ka band. J Comput Electron 14(1):167–179

    Article  Google Scholar 

  • won Jung C, Lee MJ, Li GP, De Flaviis F (2006) Reconfigurable scan-beam single-arm spiral antenna integrated with RF-MEMS switches. IEEE Trans Antennas Propag 54(2):455–463

    Article  Google Scholar 

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Acknowledgements

The authors would like to thank National MEMS Design Centre at National Institute of Technology Silchar India for providing all necessary facilities to carry out the research work.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology, National MEMS Design Centre, Silchar, Assam, 788010, India

    K. Girija Sravani & Koushik Guha

  2. Department of Electronics and Communication Engineering, Koneru Lakshmaih Education Foundation (Demeed To Be University), MEMS Research Center, Green fields, Vaddeswaram, Guntur, 522502, India

    K. Girija Sravani, Koushik Guha, M. Aditya, B. Balaji & K. Srinivasa Rao

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  1. K. Girija Sravani
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  2. Koushik Guha
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  3. M. Aditya
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  4. B. Balaji
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  5. K. Srinivasa Rao
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Correspondence to K. Girija Sravani.

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Sravani, K.G., Guha, K., Aditya, M. et al. Design, simulation and analysis of uniform and non-uniform serpentine step structure RF MEMS switch. Microsyst Technol 28, 855–865 (2022). https://doi.org/10.1007/s00542-021-05216-1

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  • DOI: https://doi.org/10.1007/s00542-021-05216-1

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