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Design and analysis of high-speed 8-bit ALU using 18 nm FinFET technology

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Abstract

All modern computational devices consist of ALU. With increase in complexity of software and the consistent shift of software towards parallelism, high speed processors with hardware support for time consuming operations such as multiplication would benefit. Smaller, compact devices such as IoT devices need to run software such as security software and be able to offload computation cost from the cloud. In this paper, a high speed 8-bit ALU using 18 nm FinFET technology is proposed. The arithmetic and logical unit consists of fast compute units such as Kogge Stone fast adder and Dadda multiplier along with basic logic gates. In this paper, an ALU with each compute unit optimized for speed is proposed, while responsibly consuming area. Dadda multiplier is of 8 × 8 architecture as opposed to conventional approach of 4 × 4 making it a true 8-bit ALU. Simulation and analysis is done using Cadence Virtuoso in Analog Design Environment. The transistor count of proposed design is 5298, the power consumption is 219 µW and maximum delay is 166.8 ps. The design is also expected to consume a maximum of one clock cycle for any computation.

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Acknowledgements

License and infrastructure for Cadence Virtuoso 6.1.6-64b tool used in this research was provided by Department of Electronics and Communication Engineering, Rashtreeya Vidyalaya College of Engineering (RVCE).

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Rashtreeya Vidyalaya College of Engineering, Bangalore, Karnataka, 560059, India

    N. Shylashree, B. Venkatesh, T. M. Saurab & Tarun Srinivasan

  2. Department of Electronics and Communication Engineering, Birla Institute of Technology Mesra, Ranchi, 835215, Jharkhand, India

    Vijay Nath

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  1. N. Shylashree
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  2. B. Venkatesh
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  3. T. M. Saurab
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  4. Tarun Srinivasan
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Correspondence to N. Shylashree.

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Shylashree, N., Venkatesh, B., Saurab, T.M. et al. Design and analysis of high-speed 8-bit ALU using 18 nm FinFET technology. Microsyst Technol 25, 2349–2359 (2019). https://doi.org/10.1007/s00542-018-4112-y

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  • DOI: https://doi.org/10.1007/s00542-018-4112-y

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