Abstract
The paper presents design, analytical modelling and system level simulations of a highly sensitive single-axis in-plane Micro-Electro-Mechanical-Systems (MEMS) differential capacitive accelerometer. The designed accelerometer is Deep-Reactive-Ion-Etching (DRIE)-based with Silicon-on-Insulator (SOI) wafer technology. Analytical models have been derived for frequency as well as transient response analysis. For system level simulations, accelerometer model were extracted from MEMS+® and further integration for the readout electronics were performed using MATLAB Simulink® module. The accelerometer has response time of 0.7 ms and settling time of 5 ms. The accelerometer has the displacement sensitivity of 0.121 μm/g, capacitive sensitivity of 225 fF/g and electrical sensitivity of 0.34 V/g for MS3110 capacitive to voltage readout circuitry, with a resolution of better than 1 mg. The device shows very less non-linearity (~ 0.3%) in the operating range of ± 5 g with a bandwidth of 100 Hz. The simulation results of designed open-loop readout circuitry to read the applied acceleration in terms of voltage are also presented.
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Acknowledgements
The authors would like to acknowledge the Director, CSIR-CEERI, Pilani for his generous support. We are thankful to all the members and technical staff of Process Technology Group (Smart Sensors Area) for their help and motivation. Financial support from CSIR, India is gratefully acknowledged.
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Mukhiya, R., Agarwal, P., Badjatya, S. et al. Design, modelling and system level simulations of DRIE-based MEMS differential capacitive accelerometer. Microsyst Technol 25, 3521–3532 (2019). https://doi.org/10.1007/s00542-018-04292-0
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DOI: https://doi.org/10.1007/s00542-018-04292-0