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Hydrophobic direct bonding of silicon reconstructed surfaces

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Abstract

The bonding of hydrophobic, reconstructed (001) Si surfaces obtained with high temperature H2 processes has been studied with atomic force microscopy, low energy electron diffraction spectroscopy, X-ray reflectivity and bonding energy measurements. Surface reconstruction is shown to strongly affect bonding mechanisms. As a consequence, bonding energies of such surfaces are significantly higher, in the room temperature −500 °C range, than those of “HF-last” surfaces.

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Acknowledgments

This work has been partly funded by the “AtMol” European Union Project (Grant agreement no 270028).

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Authors and Affiliations

  1. CEA, LETI, Minatec Campus, 17 rue des Martyrs, 38054, GRENOBLE Cedex 9, France

    C. Rauer, J. M. Hartmann, A.-M. Charvet, F. Fournel, D. Mariolle, C. Morales & H. Moriceau

  2. CEA, INAC, 17 rue des Martyrs, 38054, GRENOBLE Cedex 9, France

    F. Rieutord

Authors
  1. C. Rauer
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  2. F. Rieutord
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  3. J. M. Hartmann
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  4. A.-M. Charvet
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  5. F. Fournel
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  6. D. Mariolle
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  7. C. Morales
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  8. H. Moriceau
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Correspondence to C. Rauer.

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Rauer, C., Rieutord, F., Hartmann, J.M. et al. Hydrophobic direct bonding of silicon reconstructed surfaces. Microsyst Technol 19, 675–679 (2013). https://doi.org/10.1007/s00542-013-1735-x

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  • DOI: https://doi.org/10.1007/s00542-013-1735-x

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