Abstract
This work describes the design, simulation, fabrication and characterization of a TiN/Pt microheater prepared on a GaAs micromechanical structure as a prospective device for micro-electro-mechanical system (MEMS) sensor arrays. Electro-thermal simulation was employed to verify the properties of the designed microstructure, which confirmed achievement of the operating temperatures in the range from 470 to 600 K with a heating power less than 25 mW. The average temperature gradient in the active area does not exceed 0.6 K/μm. Fabrication of GaAs suspended membranes was demonstrated, realized in two steps by combination of surface and bulk micromachining. Development and characterization of a microheater on a GaAs membrane is described. The mechanical stability of the heated multilayer membrane structure was tested and satisfactory mechanical stability of the hotplate was confirmed. The power consumption at an operating temperature of approximately 550 K is about 30 mW which is in good agreement with the value of about 22 mW obtained from electro-thermal simulation. The achieved thermal resistance value is 8.43 K/mW.
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This work was supported by the Scientific Grant Agency of the Ministry of Education of the Slovak Republic and of the Slovak Academy of Sciences, No. 1/3095/06, by Science and Technology Assistance Agency under contract No. APVT-20-021004.
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Hotovy, I., Rehacek, V., Mika, F. et al. Gallium arsenide suspended microheater for MEMS sensor arrays. Microsyst Technol 14, 629–635 (2008). https://doi.org/10.1007/s00542-007-0470-6
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DOI: https://doi.org/10.1007/s00542-007-0470-6