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SOI-CMOS compatible low-power gas sensor using sputtered and drop-coated metal-oxide active layers

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Abstract

In this paper, a Silicon-On-Insulator (SOI) solid-state gas-sensor with an original design of a polysilicon loop-shaped microheater fabricated on a thin-stacked dielectric membrane is presented. The microheater ensures high thermal uniformity and very low power consumption (25 mW for heating at 400°C). Sensitive films are based on tin and tungsten oxides deposited either by RF sputtering or drop coating methods. The fabricated sensors are tested to a wide variety of contaminant species and promising results are obtained. The use of completely CMOS compatible TMAH-based bulk micro-machining techniques during the fabrication process, allows easy smart gas sensor integration in SOI-CMOS technology. This makes SOI-based gas-sensing devices particularly attractive for use in handheld battery-operated gas monitors.

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Acknowledgments

P. Ivanov gratefully acknowledges a pre-doctoral grant AP2001-2346, funded by the Spanish Ministry of Education. This work has been funded in part by the Spanish Commission for Science and Technology under grant no. TIC2000-1598-C02.

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Ivanov, P., Laconte, J., Raskin, J.P. et al. SOI-CMOS compatible low-power gas sensor using sputtered and drop-coated metal-oxide active layers. Microsyst Technol 12, 160–168 (2005). https://doi.org/10.1007/s00542-005-0003-0

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  • DOI: https://doi.org/10.1007/s00542-005-0003-0

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