Abstract
With the recent rapid growth of Radio Frequency Micro-Electro-Mechanical Systems (RF MEMS) switches, there has developed an emergent requirement for more accurate theoretical models to predict their electromechanical behaviors. Many parameters exist in the analysis of the behavior of the switch, and it is inconvenient for further study. In this paper, an improved model is introduced, considering simultaneously axial stress, residual stress, and fringing-field effect of the fixed-fixed bridge structure. To avoid any unnecessary repetitive model tests and numerical simulation for RF MEMS switches, some dimensionless numbers are derived by making governing equation dimensionless. The electromechanical behavior of the fixed-fixed bridge structure of RF MEMS switches is totally determined by these dimensionless numbers.
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The supports from the Key Project from the Chinese Academy of Sciences (No. KJCX2-SW-L2), projects from the NSFC (Nos 19928205, No. 50131160739 and No. 10072068), and the National “973” Project (Grant No. G1999033103) are gratefully acknowledged. The authors would like to thanks Prof. Yilong Hao of Institute of Microelectronics, Peking University, for helpful discussion.
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Zhang, L., Zhao, YP. Electromechanical model of RF MEMS switches. Microsystem Technologies 9, 420–426 (2003). https://doi.org/10.1007/s00542-002-0250-2
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DOI: https://doi.org/10.1007/s00542-002-0250-2