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Synthesis of new fluorene-based poly(aryl ether) containing pendant tert-butyl groups for low dielectric materials

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Abstract

A new fluorene-based bisphenol monomer containing pendant tert-butyl groups, 9,9-bis(3-tert-butyl-4-hydroxy)phenyl-fluorene (BTHF), was readily synthesized in high yield by a one-step reaction from inexpensive starting materials. The resulting poly(aryl ether) (FPAE 3) was successfully prepared by a mild nucleophilic aromatic substitution reaction using this fluorene-based bisphenol and decafluorobiphenyl. The obtained poly(aryl ether) exhibited good solubility in some low-boiling-point solvents and could be cast into flexible and strong film. It displayed high thermal stability with glass transition temperature at 264 °C and 5 % weight loss temperatures at 487 °C in air atmospheres. Moreover, it revealed low dielectric constants with the value of 2.64 at 1 MHz measured for its capacitance.

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Acknowledgment

This work was supported by the National Natural Science Foundation of China (No. 21404016 and 51103016), Natural Science Foundation of Jiangsu Province (No. BK20141173), the Opening Project of State Key Laboratory of Molecular Engineering of Polymers (No. K2013-25), and a Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions of China.

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Authors and Affiliations

  1. School of Materials Science and Engineering, School of Petrochemical Engineering, Changzhou University, Changzhou, 213164, China

    Chenyi Wang, Chang Xu, Qifan Li, Wentao Chen & Xiaoyan Zhao

  2. State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, China

    Chenyi Wang

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  1. Chenyi Wang
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  2. Chang Xu
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  3. Qifan Li
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  4. Wentao Chen
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  5. Xiaoyan Zhao
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Correspondence to Chenyi Wang or Xiaoyan Zhao.

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Wang, C., Xu, C., Li, Q. et al. Synthesis of new fluorene-based poly(aryl ether) containing pendant tert-butyl groups for low dielectric materials. Colloid Polym Sci 293, 313–318 (2015). https://doi.org/10.1007/s00396-014-3427-1

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  • DOI: https://doi.org/10.1007/s00396-014-3427-1

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