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Influence of steps and defects on the dissociative adsorption of molecular hydrogen on silicon surfaces

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. Neither the absolute values nor the temperature dependence of adsorption on the terraces are affected by the misorientation.

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  1. Max-Planck-Institut für Quantenoptik, D-85740 Garching, Germany; Physik Department, Technische Universität München, D-85747 Garching, Germany (Fax: +49-89/32905-200, E-mail: Hoefer@mpq.mpg.de), , , , , , DE

    M.B. Raschke & U. Höfer

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  1. M.B. Raschke
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  2. U. Höfer
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Received: 3 November 1998

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Raschke, M., Höfer, U. Influence of steps and defects on the dissociative adsorption of molecular hydrogen on silicon surfaces . Appl Phys B 68, 649–655 (1999). https://doi.org/10.1007/s003400050680

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  • DOI: https://doi.org/10.1007/s003400050680

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