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Ti:sapphire rib channel waveguide fabricated by reactive ion etching of a planar waveguide

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Abstract.

We report, to our knowledge, the first active channel waveguide in Ti:sapphire. We have created ∼1.4-μm high ribs in a ∼10-μm thick Ti:sapphire planar waveguide by reactive ion etching. Following excitation by an Ar-ion laser, the rib structure showed channel-waveguide fluorescence emission. The mode profiles and the beam-parameter values (M2) were measured. The coupling efficiency of fluorescence emission into a single-mode fiber was an order of magnitude higher than for fluorescence from unstructured planar regions of the waveguide. Such devices are of interest as low-threshold tunable lasers and as broadband light sources in low-coherence interferometry.

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Authors and Affiliations

  1. Institute of Applied Optics, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland, CH

    A. Crunteanu, M. Pollnau, G. Jänchen, P. Hoffmann & R.P. Salathé

  2. Center of Microtechnology, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland, CH

    C. Hibert

  3. Optoelectronics Research Centre, University of Southampton, Highfield, Southampton SO17 1BJ, UK, GB

    R.W. Eason, C. Grivas & D.P. Shepherd

Authors
  1. A. Crunteanu
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  2. M. Pollnau
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  3. G. Jänchen
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  4. C. Hibert
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  5. P. Hoffmann
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  6. R.P. Salathé
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  7. R.W. Eason
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  8. C. Grivas
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  9. D.P. Shepherd
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Additional information

Received: 22 December 2002 / Revised version: 30 March 2002 / Published online: 8 August 2002

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Crunteanu, A., Pollnau, M., Jänchen, G. et al. Ti:sapphire rib channel waveguide fabricated by reactive ion etching of a planar waveguide. Appl Phys B 75, 15–17 (2002). https://doi.org/10.1007/s00340-002-0952-2

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  • DOI: https://doi.org/10.1007/s00340-002-0952-2

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