Abstract.
Raman characteristics of carbon nitride films synthesized by nitrogen-ion-beam-assisted pulsed laser deposition were investigated. In addition to the D (disorder) band and G (graphitic) band commonly observed in carbon nitride films, two Raman bands located at 1080–1100 and 1465–1480 cm-1 were found from our carbon nitride films. These two bands were well matched with the predicted Raman frequencies for βC3N4 and the observed Raman bands reported for carbon nitride films, indicating their relation to carbon-nitrogen stretching vibrations. Furthermore, the relative intensity ratio of the two Raman bands to the D and G bands increased linearly with increasing nitrogen content of the carbon nitride films.
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Received: 30 October 2000 / Accepted: 5 February 2001 / Published online: 2 October 2001
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Chen, Z., Zhao, J., Yano, T. et al. Raman characteristics of carbon nitride synthesized by nitrogen-ion-beam-assisted pulsed laser deposition . Appl Phys A 74, 213–216 (2002). https://doi.org/10.1007/s003390100859
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DOI: https://doi.org/10.1007/s003390100859