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On the determination of energy fluxes at plasma–surface processes

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Abstract.

A summary is given of different methods for the determination of the energy influx and its influence on the thermal balance and energetic conditions of substrate surfaces during plasma processing. The discussed mechanisms include heat radiation and kinetic and potential energy of charged particles and sputtered neutrals. For a few examples such as magnetron sputtering of a-C:H films, sputter deposition of aluminum on microparticles, and titanium deposition in a hollow-cathode arc evaporation device the energetic balance of substrates during plasma processing is presented.

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Authors and Affiliations

  1. Department of Physics, University of Greifswald, Germany, , , , , , DE

    H. Kersten, D. Rohde, H. Steffen, H. Deutsch & R. Hippler

  2. Department of Physics, Technical University Eindhoven, The Netherlands, , , , , , NL

    G.H.P.M. Swinkels & G.M.W. Kroesen

Authors
  1. H. Kersten
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  2. D. Rohde
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  3. H. Steffen
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  4. H. Deutsch
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  5. R. Hippler
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  6. G.H.P.M. Swinkels
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  7. G.M.W. Kroesen
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Additional information

Received: 6 July 2000 / Accepted: 12 December 2000 / Published online: 3 April 2001

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Kersten, H., Rohde, D., Steffen, H. et al. On the determination of energy fluxes at plasma–surface processes . Appl Phys A 72, 531–540 (2001). https://doi.org/10.1007/s003390100811

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  • DOI: https://doi.org/10.1007/s003390100811

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