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Preferential regrowth of indium–tin oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter

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Abstract.

Effects of thermal treatments on the electrical properties and microstructures of indium–tin oxide (ITO)/GaN contacts have been investigated using a rf-magnetron sputter deposition followed by rapid thermal annealing. ITO films annealed at 800 °C revealed Schottky contact characteristics with a barrier height corresponding to ITO’s work function of 4.62 eV. The evolution of electrical properties of ITO/GaN contacts was attributed to the preferential regrowth of In2O3 (222)//GaN (0001) with an ideal metal–semiconductor Schottky contact. The feasible use of ITO/GaN as a transparent Schottky contact would be realized by the enhanced regrowth of In2O3 at high temperature.

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Authors and Affiliations

  1. SiGe Device Team, Microelectronics Technology Research Laboratory, Electronics and Telecommunications Research Institute, 161 Kajong-Dong, Yusong-Gu, Taejon, 305-350, Korea, , , , , , KR

    K.-H. Shim, M.C. Paek & J.Y. Kang

  2. Department of Materials Science and Engineering, Chonnam National University, Korea, , , , , , KR

    B.T. Lee

  3. LG Corporate Institute of Technology, 16 Woomyeon-Dong, Seocho-Gu, Seoul, 137-724, Korea, , , , , , KR

    C. Kim

Authors
  1. K.-H. Shim
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  2. M.C. Paek
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  3. B.T. Lee
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  4. C. Kim
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  5. J.Y. Kang
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Received: 1 September 2000 / Accepted: 15 November 2000 / Published online: 28 February 2001

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Shim, KH., Paek, M., Lee, B. et al. Preferential regrowth of indium–tin oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter . Appl Phys A 72, 471–474 (2001). https://doi.org/10.1007/s003390100787

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  • DOI: https://doi.org/10.1007/s003390100787

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