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Field induced oxidation of silicon by SPM: study of the mechanism at negative sample voltage by STM, ESTM and AFM

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Authors and Affiliations

  1. Department of Electronic Engineering, Universitat Autònoma de Barcelona, E-08193 Bellaterra, Spain (Fax: +34-3/581-1350, E-mail: fpm@cc.uab.es), , , , , , ES

    G. Abadal, F. Pérez-Murano, N. Barniol & X. Aymerich

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  1. G. Abadal
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  2. F. Pérez-Murano
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  3. N. Barniol
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  4. X. Aymerich
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Received: 25 July 1997/Accepted: 1 October 1997

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Abadal, G., Pérez-Murano, F., Barniol, N. et al. Field induced oxidation of silicon by SPM: study of the mechanism at negative sample voltage by STM, ESTM and AFM . Appl Phys A 66 (Suppl 1), S791–S795 (1998). https://doi.org/10.1007/s003390051244

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  • DOI: https://doi.org/10.1007/s003390051244

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