Abstract.
Nanocrystalline GaSb embedded in SiO2 films was grown by radio-frequency magnetron co-sputtering. X-ray diffraction pattern and transmission electron microscopy (TEM) confirm the existence of GaSb nanocrystals in the SiO2 matrix. The average size of GaSb nanoparticles is in the range of 3 to 11 nm. Diffuse reflectance spectra were used to characterize the small change of the band gap of the semiconductor. The diffuse reflectance spectra shows that the absorption peaks have a large blueshift of about 4.0 eV of the absorption relative to that of bulk GaSb. It has been explained by quantum confinement effects. Room temperature optical transmission spectra show that the absorption edge exhibits a very large blueshift of about 2.1 eV with respect to that of bulk GaSb in agreement with quantum confinement.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
Author information
Authors and Affiliations
Additional information
Received: 28 July 1999 / Accepted: 27 October 1999 / Published online: 1 March 2000
Rights and permissions
About this article
Cite this article
Liu, F., Jia, J. & Zhang, L. Optical diffuse reflectance spectra of GaSb nanocrystals embedded in SiO2 matrix by radio-frequency magnetron co-sputtering. Appl Phys A 70, 457–459 (2000). https://doi.org/10.1007/s003390051067
Issue Date:
DOI: https://doi.org/10.1007/s003390051067