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, 2512 (1996)]. The trapping coefficient of single-negative silicon vacancies was also derived.
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Received: 25 August 1997/Accepted: 27 March 1998
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Kawasuso, A., Itoh, H., Morishita, N. et al. Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance . Appl Phys A 67, 209–212 (1998). https://doi.org/10.1007/s003390050759
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DOI: https://doi.org/10.1007/s003390050759