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Oxygen-segregation-controlled epitaxy of Y2O3 films on Nb(110)

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Abstract.

We demonstrate a very simple and reliable method of manufacturing clean, single-crystalline Y2O3 films on Nb(110) substrates in situ. The method exploits the oxygen bulk contamination of Nb as a source of clean oxygen. For substrate temperatures above 800 K oxygen segregation to the Nb surface is so efficient, that yttrium becomes oxidized during deposition without any background oxygen pressure required in the ultrahigh vacuum system. The crystallinity and stoichiometry of these films can be tuned by the deposition temperature. For Y deposition at 1300 K the formation of well-ordered (111)-oriented Y2O3 films is achieved.

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Authors and Affiliations

  1. Institut de physique, Université de Fribourg, Pérolles, 1700 Fribourg, Switzerland, , , , , , CH

    J. Hayoz, M. Bovet, T. Pillo, L. Schlapbach & P. Aebi

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  1. J. Hayoz
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  2. M. Bovet
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  3. T. Pillo
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  4. L. Schlapbach
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  5. P. Aebi
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Received: 19 April 2000 / Accepted: 20 April 2000 / Published online: 23 August 2000

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Hayoz, J., Bovet, M., Pillo, T. et al. Oxygen-segregation-controlled epitaxy of Y2O3 films on Nb(110) . Appl Phys A 71, 615–618 (2000). https://doi.org/10.1007/s003390000569

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  • DOI: https://doi.org/10.1007/s003390000569

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