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Influence of low energy Ag ion irradiation for formation of Bi2Se3 phase from Bi/GeSe2 heterostructure thin films

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Abstract

The manuscript reports on the influence of 40 keV Ag –ve ion bombardment with different fluences on the microstructural and optical properties of thermally evaporated Bi/GeSe2 bilayer thin films. Two different fluences (5 × 1014 ions cm−2 and 1 × 1015 ions cm−2) of Ag –ve ions were used to irradiate the thin films that changed the microstructure and optical properties as studied by different spectroscopic methods like X-ray diffraction method (XRD), Energy dispersive X-ray spectroscopy (EDS), Field emission scanning electron microscopy (FESEM), Atomic force microscopy (AFM), Raman spectroscopy, and UV–Vis spectroscopy. The evolution of topological Bi2Se3 phase occurs after ion irradiated diffusion of Bi into GeSe2 matrix. The optical parameters as calculated from the transmission spectra infers the indirect allowed transition with reduction of Eg on ion irradiation. The various optical parameters like absorption coefficient (α), optical energy gap (Eg), Tauc parameter (B1/2), Urbach energy (Ee), extinction coefficient (k), refractive index (n) were modified with ion irradiation. The surface morphology is being changed after irradiation as probed by AFM and FESEM. The Raman spectra support the formation of Bi2Se3 phase with irradiation. The obtained results have been explained on the basis of increase in band tailing of valence band due to defect states caused by the irradiation.

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Acknowledgements

The authors thank Board of Research in Nuclear Science (BRNS) for financial support (Grant Number: 37(3)/14/02/2016-BRNS/37016) and Department of Physics, Indian Institute of Science (IISc.) for Optical and Raman measurement. The author is also thankful to NISER, Bhubaneswar for the FESEM measurement.

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Authors and Affiliations

  1. Department of Physics, Utkal University, Bhubaneswar, 751004, India

    Adyasha Aparimita

  2. Department of Engineering and Material Physics, ICT-IOC, Bhubaneswar, 751013, India

    R. Naik

  3. Institute of Physics, Bhubaneswar, 751005, India

    S. Sahoo

  4. Department of Physics, Indian Institute of Science, Bangalore, 560012, India

    C. Sripan & R. Ganesan

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  1. Adyasha Aparimita
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Aparimita, A., Naik, R., Sahoo, S. et al. Influence of low energy Ag ion irradiation for formation of Bi2Se3 phase from Bi/GeSe2 heterostructure thin films. Appl. Phys. A 126, 203 (2020). https://doi.org/10.1007/s00339-020-3390-2

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