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Effect of interface coupling on magnetoelectric response of Pb(Zr0.52Ti0.48)O3/La0.67Sr0.33MnO3 thin film under different strain states

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Abstract

Epitaxial Pb(Zr0.52Ti0.48)O3/La0.67Sr0.33MnO3 (PZT/LSMO) thin film grown on SrTiO3 single-crystal substrate has been fabricated by pulsed laser deposition. The results of X-ray diffraction and reciprocal space mapping indicate that PZT and LSMO are under different strain states, respectively. This configuration could enhance the interface coupling coefficient (k), resulting in an improvement of magnetoelectric voltage coefficient (αE31). The k value increases with the increase of DC magnetic field owing to the magnetostriction of ferromagnetic LSMO. The maximum αE31 reaches 122 mV/cm Oe at the DC magnetic field of about 4.5 kOe, which is in good agreement with the result of theoretical calculation. The understanding of the effect of interface coupling for ferroelectric/ferromagnetic composite thin film with different strain states could be useful for the design of multifunctional devices.

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Acknowledgements

The authors would like to thank Mr. Jingyi Chen of PANalytical Division, Spectris Instrumentation and Systems, Shanghai Ltd. for the assistance of RSM measurements, and Mr. Sheng Liu of Quantum Design China for the help of measurements of magnetoelectric coupling coefficient. This work was supported by the National Natural Science Foundation of China (Grant No. 51372074).

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  1. Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei Key Laboratory of Polymer Materials, Department of Materials Science and Engineering, Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan, 430062, China

    Peng Zhou, Kun Liang, Ying Liu, Zhiqiang Zheng & Tianjin Zhang

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Zhou, P., Liang, K., Liu, Y. et al. Effect of interface coupling on magnetoelectric response of Pb(Zr0.52Ti0.48)O3/La0.67Sr0.33MnO3 thin film under different strain states. Appl. Phys. A 124, 670 (2018). https://doi.org/10.1007/s00339-018-2082-7

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