Abstract
Selective laser lift-off of GaN from a sapphire substrate was demonstrated using 266-nm diode-pumped solid-state laser irradiation. To fabricate a single GaN light-emitting diode (LED) with a size of 100 μm × 100 μm, we used a simple direct scanning technique with a defocused beam and investigated the lift-off parameter in terms of the intensity. Two processing windows corresponding to lower- and higher-intensity regimes were observed experimentally. In the lower-intensity regime, the larger beam size worked better than with the higher regime. Although fluence is generally explained as a processing condition, the total input fluence for a single LED was not crucial to lift-off in case of the scanning technique using a defocused laser beam. However, an intensity of ~37 kW/cm2 was required to initiate the thermal decomposition reaction in GaN at any sample position.
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Kim, J., Kim, JH., Cho, SH. et al. Selective lift-off of GaN light-emitting diode from a sapphire substrate using 266-nm diode-pumped solid-state laser irradiation. Appl. Phys. A 122, 305 (2016). https://doi.org/10.1007/s00339-016-9928-7
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DOI: https://doi.org/10.1007/s00339-016-9928-7