Abstract
To effectively lower the power consumption effect of Sn:SiO2 RRAM devices, the electrical hopping conduction mechanism for set/reset state was effectively used and achieved by different constant compliance current forming process. To assume and discuss the tin metal clustered reaction and electron transport behaviors in metallic filament path-forming model, the various electrical switching current and conduction mechanism model of the Sn:SiO2 RRAM devices for different constant compliance current were also investigated and described. Finally, the switching current relationship between hopping conduction energy and average inter-trap distance properties of the RRAM devices was also simulated and demonstrated in this study.
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This work will acknowledge the financial support of the National Science Council of the Republic of China (103-2633-E-272-001-) and (104-2633-E-272 -001 -MY2).
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Chen, KH., Chang, KC., Chang, TC. et al. Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devices. Appl. Phys. A 122, 228 (2016). https://doi.org/10.1007/s00339-016-9768-5
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DOI: https://doi.org/10.1007/s00339-016-9768-5