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Self-organization of polarization-dependent periodic nanostructures embedded in III–V semiconductor materials

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Abstract

Space-selective nanostructuring inside various III–V semiconductor materials containing gallium element has been accomplished by focused irradiation of IR femtosecond laser pulses. To elucidate the formation mechanisms of periodic nanostructures, we systematically classified III–V semiconductor materials in which polarization-dependent periodic nanostructure can be formed. Self-organization of the periodic nanostructures could be induced empirically only if it is indirect bandgap semiconductor, namely GaP.

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Acknowledgments

This work was partially supported by JSPS KAKENHI, The Thermal & Electric Energy Technology Foundation, Tokuyama Science Foundation, Cross-Ministerial Strategic Innovation Promotion (SIP) Program and Industry-Academia Collaborative R&D Programs (Super Cluster Program), NIMS microstructural characterization platform as a program of Nanotechnology Platform of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.

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Authors and Affiliations

  1. Department of Material Chemistry, Kyoto University, Kyoto, 615-8510, Japan

    Y. Shimotsuma, T. Sei, M. Mori & K. Miura

  2. Society-Academia Collaboration for Innovation, Kyoto University, Kyoto, 615-8510, Japan

    M. Sakakura

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  1. Y. Shimotsuma
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  2. T. Sei
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  3. M. Mori
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  4. M. Sakakura
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  5. K. Miura
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Correspondence to Y. Shimotsuma.

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Shimotsuma, Y., Sei, T., Mori, M. et al. Self-organization of polarization-dependent periodic nanostructures embedded in III–V semiconductor materials. Appl. Phys. A 122, 159 (2016). https://doi.org/10.1007/s00339-016-9686-6

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