Abstract
This study investigates a theoretical study based on the determination of electrical parameters in solar cell junction vertical parallel silicon under polychromatic illumination and frequency modulation. From the excess minority carrier’s density in the solar cell, the photocurrent density and the photovoltage are derived. The route of the current voltage density (I = f(V)) that materializes the behavior of the generator; we have a model on the shunt resistance and the series resistance. The I–V method is used to determine electrical parameters such as resistance and shunt resistance or various junction recombination velocity. From their expressions, we study their pace according to Bode and Nyquist and then extend the study to other electrical parameter. The Bode diagrams of the diffusion capacitance are shown for different junction recombination velocity.
Similar content being viewed by others
References
B. Mazhari, H. Morkoç, Surface recombination in GaAs PN junction diode. J. Appl. Phys. 73(11), 7509–7514 (1993)
H. El Ghitani, S. Martinuzzi, Influence of dislocations on electrical properties of large grained polycrystalline silicon cells. I: model. J. Appl. Phys. 66(4), 1717–1722 (1989)
P.H. Nguyen, C. Michel, J. Bottin, Etude de la conversion photovoltaïque: effets des resistances parasites des photopiles. Revue. Phys. Appl. 18, 775–779 (1983)
R. Topkaya, I. Auwal, A. Baykal, Effect of temperature on magnetic properties of BaYxFe12–xO19 hexaferrites. Ceram. Int. 42, 16296–16302 (2016)
M. Sane, H.L. Diallo, G. Sahin, N. Thiam, M. Ndiaye, M. Dieng, G. Sissoko, Influence of incidence angle on the electrical parameters of a vertical silicon solar cell under frequency modulation. Int. J. Invent. Eng. Sci. (TM) 1(11), 37–40 (2013). ISSN 2319-9598
A. Thiam, M. Zoungrana, H. Ly Diallo, A. Diao, N. Thiam, S. Gueye, M.M. Deme, M. Sarr, G. Sissoko, Influence of incident illumination angle on capacitance of a silicon solar cell under frequency modulation. Res. J. App. Sci. Eng. Technol. 5, 1123–1128 (2013)
M.L. Samb, M. Sarr, S. Mbodj, S. Gueye, M. Dieng, G. Sissoko, Etude en modélisation à 3D d’une photopile au silicium en régime statique sous éclairement multispectral: détermination des paramétres électriques. J. Sci. 9(4), 36–50 (2009)
M.M. Dione, S. Mbodji, L. Samb, M. Dieng, M. Thiame, S. Ndoye, F.I. Barro, G. Sissoko, Vertical junction under constant multispectral light: determination of recombination parameters, in Proceedings of the 24th European Photovoltaic Solar Energy Conference, pp. 465–469, 2009
J.D. Arona, S.N. Singh, P.C. Marthur, Surface recombination effects on the performance of n + p step and diffused junction silicon solar cells. Solid State Electron. 24(8), 739–747 (1981)
J. Furlan, S. Amon, Approximation of the carrier generation rate in illuminated silicon. Solid State Electron. 28(12), 1241–1243 (1985)
J.N. Hollenhorst, G. Hasnain, Frequency dependent hole diffusion in InGaAs double heterostructures. Appl. Phys. Lett. 67, 2203–2205 (1995)
A. Mandelis, Coupled ac photocurrent and photothermal reflectance response theory of semiconducting p–n junction. J. Appl. Phys. 66(11), 5572–5583 (1989)
S.N. Mohammad, An alternative method for the performance analysis of silicon solar cells. J. Appl. Phys. 61(2), 767–772 (1987)
G. Sahin, Effect of wavelength on the electrical parameters of a vertical parallel junction silicon solar cell illuminated by its rear side in frequency domain. Results Phys. 6, 107–111 (2016)
E.H. Ndiaye, G. Sahin, M. Dieng, A. Thiam, H.L. Diallo, M. Ndiaye, G. Sissoko, Study of the intrinsic recombination velocity at the junction of silicon solar under frequency modulation and irradiation. J. Appl. Math. Phys. 3, 1522–1535 (2015)
M. Sané, F.I. Barro, Investigation on silicon solar cell capacitance and its dependence on both temperature and incidence angles. Adv. Sci. Technol. 8(24), 9–12 (2014)
F.I. Barro, M. Sane, B. Zouma, On the capacitance of crystalline silicon solar cells in steady state. Turk. J. Phys. 39, 122–127 (2015)
S. Mbodji, M. Zoungrana, I. Zerbo, B. Dieng, G. Sissoko, Modelling study of magnetic field’s effects on solar cell’s transient decay. World J. Condens. Matter Phys. 5, 284–293 (2015)
M. Ndiaye, Z.N. Bako, I. Zerbo, A. Dieng, F.I. Barro, G. Sissoko, Détermination des paramètres électriques d’une photopile sous éclairement monochromatique en modulation de fréquence, a partir des diagrammes de Bode et de Nyquist. J. Sci. 8(3), 59–68 (2008)
R.A. Kumar, M.S. Suresh, J. Nagaraju, Measurement of AC parameters for gallium arsenide (GaAs/Ge) solar cell by impedance spectroscopy. IEEE Trans. Electron. Devices 48(9), 2177–2179 (2001)
M.S. Suresh, Measurement of solar cell parameters using impedance spectroscopy. Sol. Energy Mater. Sol. Cells 43(1), 21–28 (1996)
S. Mbodj, I. Ly, H.L. Diallo, M.M. Dione, O. Diasse, G. Sissoko, Modeling study of n+/p solar cell resistances from single I–V characteristic curve considering the junction recombination velocity(Sf). Res. J. Appl. Sci. Eng. Technol. 4(1), 1–7 (2012)
A. Diao, N. Thiam, M. Zoungrana, G. Sahin, M. Ndiaye, G. Sissoko, Diffusion coefficient in silicon solar cell with applied magnetic field and under frequency: electric equivalent circuits. World J. Condens. Matter Phys. 4, 84–92 (2014)
G. Sahin, M. Dieng, M.A.O.E. Moujtaba, M.I. Ngom, A. Thiam, G. Sissoko, Capacitance of vertical parallel junction modulated illumination. J. Appl. Math. Phys. 3, 1536–1543 (2015)
H.L. Diallo, B. Dieng, I. Ly, M.M. Dione, M. Ndiaye, O.H. Lemrabott, Z.N. Bako, A. Wereme, G. Sissoko, Determination of the recombination and electrical parameters of a vertical multijunction silicon solar cell. Res. J. Appl. Sci. Eng. Technol. 4, 2626–2631 (2012)
J.W. Orton, P. Blood, The Electrical Characterization of Semiconductors: Measurement of Minority Carrier Properties (Academic Press, London, 1990)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
SAHIN, G. Effect of junction recombination velocity of electrical parameters of a vertical parallel silicon solar cell under frequency modulation. Appl. Phys. A 122, 997 (2016). https://doi.org/10.1007/s00339-016-0506-9
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s00339-016-0506-9