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Optimization of dressed-photon–phonon-assisted annealing for fabricating GaP light-emitting diodes

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Abstract

Using the two-level two-state model, we analyzed the characteristics of enhanced electroluminescence intensity from a GaP LED fabricated by dressed-photon–phonon-assisted annealing. In this model, we utilized the fact that the adiabatic potential barrier of the electronic excited level in configuration space is lower than that of the ground level. It was confirmed by experiments that, in an actual excited level, the barrier was reduced to 0.48 eV. From this finding, it was shown that the spatial distribution of Zn atoms can be changed by means of current injection and light irradiation even at room temperature. In addition, we showed that a structure that is suitable for light emission via DPPs is formed by means of a transition between a low-barrier excited level and a high-barrier ground level, due to stimulated emission. Also, regarding the optimized conditions for maximizing the effect of DPP-assisted annealing, it was found that the optimum ratio of the number of injected electrons to the number of irradiated photons is close to 1, and this was confirmed experimentally.

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Acknowledgments

This work was partially supported by the Core-to-Core Program of JSPS (A. Advanced Research Network) and a Grant-in-Aid for Scientific Research (B) (No. 24360023) of MEXT.

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Authors and Affiliations

  1. Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo, 113-8656, Japan

    Jun Hyoung Kim, Tadashi Kawazoe & Motoichi Ohtsu

  2. Specified Nonprofit Corporation Nanophotonics Engineering Organization, 1-20-10, Sekiguchi, Bunkyo-ku, Tokyo, 112-0014, Japan

    Tadashi Kawazoe & Motoichi Ohtsu

  3. International Center for Nano Electron and Photon Technology, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo, 113-8656, Japan

    Motoichi Ohtsu

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  1. Jun Hyoung Kim
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  2. Tadashi Kawazoe
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  3. Motoichi Ohtsu
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Correspondence to Jun Hyoung Kim.

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Kim, J.H., Kawazoe, T. & Ohtsu, M. Optimization of dressed-photon–phonon-assisted annealing for fabricating GaP light-emitting diodes. Appl. Phys. A 121, 1395–1401 (2015). https://doi.org/10.1007/s00339-015-9465-9

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  • DOI: https://doi.org/10.1007/s00339-015-9465-9

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