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Highly efficient white quantum dot light-emitting diode based on ZnO quantum dot

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Abstract

White quantum dot light-emitting diodes (QD-LEDs) have been a promising candidate for high-efficiency and color-saturated displays. Here, we report a simply solution-processed white QD-LED using ZnO QDs as emitters. The device is demonstrated with a maximum luminance of 300 cd/m2, exhibiting the Commission Internationale de l’Enclairage coordinates of (0.33, 0.33). The unencapsulated white QD-LED has a long lifetime of 120 h. These results indicate that ZnO QDs provides an alternate and effective approach to achieve high-performance white QD-LEDs and also other optoelectronic devices.

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Acknowledgments

This work was supported partially by the National Key Basic Research Program 973 (2013CB328804, 2013CB328803, and 2010CB327705), the National High-Tech R&D Program 863 of China (2012AA03A302, 2013AA011004) National Natural Science Foundation Project (51002031, 61007036, 61101023, 51202028, 61106055, 51372039, and 61271053), Foundation of Doctoral Program of Ministry of Education under Grant (20120092120025), the Chinese 111 Project (B07027), and Natural Science Foundation of Jiangsu Province of China (BK20141390).

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Correspondence to Jing Chen.

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Chen, J., Pan, J., Qingguo, D. et al. Highly efficient white quantum dot light-emitting diode based on ZnO quantum dot. Appl. Phys. A 117, 589–591 (2014). https://doi.org/10.1007/s00339-014-8707-6

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