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A comparative study of SELBOX-JLT and SOI-JLT

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Abstract

Analysis of thermal and electrical characteristics of the proposed device, selective buried oxide junctionless transistor (SELBOX-JLT) along with its analog performance, is compared with silicon on insulator junctionless transistor (SOI-JLT). The proposed device shows better thermal efficiency. The maximum device temperature of SELBOX-JLT is 311 K, much less than that of SOI-JLT (445 K). The proposed device has almost no effect of self-heating on output characteristics. SELBOX-JLT exhibits better I ON/I OFF ratio, subthreshold slope, and drain-induced barrier lowering as compared to SOI-JLT for the same channel length. The analog performance parameters as transconductance (G m ), transconductance/drain current ratio (G m /I D), drain conductance (G D), output resistance (R 0), intrinsic gain (G m R 0), and unity-gain frequency (f T ) of the proposed device are found to be better than SOI-JLT.

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Authors and Affiliations

  1. Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, 208016, India

    Uzma Khan, Bahniman Ghosh, Md Waseem Akram & Akshaykumar Salimath

  2. Microelectronics Research Center, University of Texas at Austin, 10100 Burnet Road, Austin, TX, 78758, USA

    Bahniman Ghosh

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  1. Uzma Khan
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  2. Bahniman Ghosh
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Correspondence to Akshaykumar Salimath.

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Khan, U., Ghosh, B., Akram, M.W. et al. A comparative study of SELBOX-JLT and SOI-JLT. Appl. Phys. A 117, 2281–2288 (2014). https://doi.org/10.1007/s00339-014-8661-3

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  • DOI: https://doi.org/10.1007/s00339-014-8661-3

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