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Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer

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Abstract

InGaN-based light-emitting diodes with graded indium composition p-type InGaN hole reservoir layer (HRL) are numerically investigated using the APSYS simulation software. It is found that by gradient increasing indium composition in growth direction of the p-InGaN HRL can improve light output power, lower current leakage and efficiency droop. Based on numerical simulation and analysis, these improvements on the electrical and optical characteristics are attributed mainly to tailoring energy band in p–n junction vicinal region, and finally enhanced the hole injection efficiency and electron blocking efficiency.

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Acknowledgments

This work was supported by National High Technology Research and Development Program of China (Grant Nos. 2011AA03A112 and 2011AA03A106) and National Nature Science Foundation (Grant Nos. 11204360 and 61210014).

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Authors and Affiliations

  1. Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, People’s Republic of China

    Taiping Lu, Ziguang Ma, Chunhua Du, Yutao Fang, Fangsheng Chen, Yang Jiang, Lu Wang, Haiqiang Jia & Hong Chen

  2. Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou, 510631, People’s Republic of China

    Fangsheng Chen

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  1. Taiping Lu
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  2. Ziguang Ma
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  3. Chunhua Du
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  4. Yutao Fang
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  6. Yang Jiang
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  7. Lu Wang
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  8. Haiqiang Jia
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  9. Hong Chen
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Correspondence to Hong Chen.

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Lu, T., Ma, Z., Du, C. et al. Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer. Appl. Phys. A 114, 1055–1059 (2014). https://doi.org/10.1007/s00339-014-8284-8

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  • DOI: https://doi.org/10.1007/s00339-014-8284-8

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